Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

AS4LC8M8S0-10TC Datasheet(PDF) 11 Page - Alliance Semiconductor Corporation

Part # AS4LC8M8S0-10TC
Description  3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
Download  24 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4LC8M8S0-10TC Datasheet(HTML) 11 Page - Alliance Semiconductor Corporation

Back Button AS4LC8M8S0-10TC Datasheet HTML 7Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 8Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 9Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 10Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 11Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 12Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 13Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 14Page - Alliance Semiconductor Corporation AS4LC8M8S0-10TC Datasheet HTML 15Page - Alliance Semiconductor Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 11 / 24 page
background image
®
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
11
Device operation (continued)
Command
Pin Settings
Description
Burst stop
CS = WE = low; RAS =
CAS = high
Use burst stop to terminate burst operation. This command may be used
to terminate all legal burst lengths.
Bank precharge
CS = A10 = RAS = WE =
low; CAS = high; A11 =
bank select; A0~A9 =
don’t care
The Bank Precharge command precharges the bank specified by BA0 and
BA1. The precharged bank is switched from active to idle state and is
ready to be activated again. Assert the precharge command after
tRAS(min) of the bank activate command in the specified bank. The
precharge operation requires a time of tRP(min) to complete.
Precharge all
CS = RAS = WE = low;
CAS = A10 = high;
BA0~BA1 = bank select;
A0~A9 = don’t care
The Precharge All command precharges all four banks simultaneously.
All four banks are switched to the idle state on precharge completion.
Auto precharge
CS = CAS = WE (write) =
low; RAS = WE (read) =
A10 = high; BA0~BA1 =
bank select; A0~A9 =
column address; (A9 =
don’t care for 2M
×8;
A8,A9 = don’t care for
1M
×16)
During auto precharge, the SDRAM adjusts internal timing to satisfy
tRAS(min) and tRP for the programmed CAS latency and burst length.
Couple the auto precharge with a burst read/write operation by
asserting A10 to a high state at the same time the burst read/write
commands are issued. At auto precharge completion, the specified bank
is switched from active to idle state. Note that no new commands to the
bank can be issued until the specified bank achieves the idle state. Auto
precharge doesn’t work with full-page burst.
Clock suspend/power
down mode entry
CKE = low
When CKE is low, the internal clock is frozen or suspended from the
next clock cycle and the state of the output and burst address are frozen.
If all banks are idle and CKE goes low, the SDRAM enters power down
mode at the next clock cycle. When in power down mode, no input
commands are acknowledged as long as CKE remains low. To exit power
down mode, raise CKE high before the rising edge of CLK.
Clock suspend/power
down mode exit
CKE = high
Resume internal clock operation by asserting CKE high before the rising
edge of CLK. Subsequent commands can be issued one clock cycle after
the end of the Exit command.
Auto refresh
CS = RAS = CAS = low;
WE = CKE = high;
A0~A11 = don’t care
SDRAM storage cells must be refreshed every 64ms to maintain data
integrity. Use the Auto Refresh command to refresh all rows in all banks
of the SDRAM. The row address is provided by an internal counter
which increments automatically. Auto refresh can only be asserted when
all four banks are idle and the device is not in the power down mode.
The time required to complete the auto refresh operation is tRC(min).
Use NOPs in the interim until the auto refresh operation is complete.
This is the most common refresh mode. It is typically performed once
every 15.6us or in a burst of 4096 auto refresh cycles every 64ms. All
four banks will be in the idle state after this operation.
Self refresh
CS = RAS = CAS = CKE =
low; WE = high; A0~A11
= don’t care
Self refresh is another mode for refreshing SDRAM cells. In this mode,
refresh address and timing are provided internally. Self refresh entry is
allowed only when all four banks are idle. The internal clock and all
input buffers with the exception of CKE are disabled in this mode. Exit
self refresh by restarting the external clock and then asserting CKE high.
NOP’s must follow for a time of tRC(min) for the SDRAM to reach the
idle state where normal operation is allowed. If burst auto refresh is used
in normal operation, burst 4096 auto refresh cycles immediately after
exiting self refresh.


Similar Part No. - AS4LC8M8S0-10TC

ManufacturerPart #DatasheetDescription
logo
M-System Co.,Ltd.
AS4LC MSYSTEM-AS4LC Datasheet
150Kb / 4P
   Plug-in Signal Conditioners M-UNIT
AS4LC-S12-M2 MSYSTEM-AS4LC-S12-M2 Datasheet
150Kb / 4P
   Plug-in Signal Conditioners M-UNIT
AS4LC-S12-M2/Q MSYSTEM-AS4LC-S12-M2/Q Datasheet
150Kb / 4P
   Plug-in Signal Conditioners M-UNIT
AS4LC-S12-P MSYSTEM-AS4LC-S12-P Datasheet
150Kb / 4P
   Plug-in Signal Conditioners M-UNIT
AS4LC-S12-P/Q MSYSTEM-AS4LC-S12-P/Q Datasheet
150Kb / 4P
   Plug-in Signal Conditioners M-UNIT
More results

Similar Description - AS4LC8M8S0-10TC

ManufacturerPart #DatasheetDescription
logo
Hynix Semiconductor
HY57V648010 HYNIX-HY57V648010 Datasheet
887Kb / 15P
   8Mx8 bit Synchronous DRAM Series
logo
Samsung semiconductor
K3P7V1000 SAMSUNG-K3P7V1000 Datasheet
62Kb / 4P
   64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
KM23C64000T SAMSUNG-KM23C64000T Datasheet
71Kb / 4P
   64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
logo
Hanbit Electronics Co.,...
HSD16M64D16A HANBIT-HSD16M64D16A Datasheet
155Kb / 10P
   Synchronous DRAM Module 128Mbyte (16Mx64bit), DIMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
HSD16M72D18A HANBIT-HSD16M72D18A Datasheet
188Kb / 10P
   Synchronous DRAM Module 128Mbyte (16Mx72bit), DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HSD8M72D9A HANBIT-HSD8M72D9A Datasheet
86Kb / 10P
   Synchronous DRAM Module 64Mbyte (8Mx72bit),DIMM with ECC based on 8Mx8, 4Banks, 4K Ref., 3.3V
HSD8M64F8V HANBIT-HSD8M64F8V Datasheet
106Kb / 10P
   Synchronous DRAM Module 64Mbyte ( 8M x 64-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
HSD8M32F4V HANBIT-HSD8M32F4V Datasheet
82Kb / 11P
   Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) SMM based on 8Mx8, 4Banks, 4K Ref., 3.3V
logo
Alliance Semiconductor ...
AS4LC1M16S0 ALSC-AS4LC1M16S0 Datasheet
721Kb / 29P
   3.3V 2M 횞 8/1M 횞 16 CMOS synchronous DRAM
AS4LC2M8S1 ALSC-AS4LC2M8S1 Datasheet
712Kb / 28P
   3.3V 2M x 8/1M x 16 CMOS synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com