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DMTH4004LK3 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMTH4004LK3
Description  40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH4004LK3 Datasheet(HTML) 2 Page - Diodes Incorporated

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DMTH4004LK3
Document number: DS37792 Rev. 2 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DMTH4004LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6), VGS = 10V
TC = +25°C
(Note 9)
TC = +100°C
ID
100
A
100
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
200
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
100
A
Avalanche Current, L = 0.2mH
IAS
30
A
Avalanche Energy, L = 0.2mH
EAS
90
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
3.9
W
Thermal Resistance, Junction to Ambient (Note 5)
RJA
38
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
180
W
Thermal Resistance, Junction to Case (Note 6)
RJC
0.8
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
40
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current, TJ = +25°C
IDSS
1
µA
VDS = 32V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
1
3
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
2.4
3
m
Ω
VGS = 10V, ID = 50A
4
5
m
Ω
VGS = 4.5V, ID = 50A
Diode Forward Voltage
VSD
0.7
1.2
V
VGS = 0V, IS = 50A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
4,450
pF
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Coss
1,407
pF
Reverse Transfer Capacitance
Crss
74
pF
Gate Resistance
Rg
0.7
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Qg
35
nC
VDS = 20V, ID = 30A
Total Gate Charge (VGS = 10V)
Qg
83
nC
Gate-Source Charge
Qgs
10
nC
Gate-Drain Charge
Qgd
11.2
nC
Turn-On Delay Time
tD(ON)
5.9
ns
VGS = 10V, VDS = 20V,
Rg = 1.6Ω, ID = 30A
Turn-On Rise Time
tr
13.2
ns
Turn-Off Delay Time
tD(OFF)
25.8
ns
Turn-Off Fall Time
tF
7.9
ns
Body Diode Reverse Recovery Time
tRR
48
ns
IF = 50A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
QRR
72
nC
IF = 50A, di/dt = 100A/μs
Notes:
5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
whilst operating in a steady state.
6. Thermal resistance from junction to solder point (on the exposed drain pin).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package Limited.


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