Electronic Components Datasheet Search |
|
DMTH4004LK3 Datasheet(PDF) 2 Page - Diodes Incorporated |
|
DMTH4004LK3 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMTH4004LK3 Document number: DS37792 Rev. 2 - 2 2 of 7 www.diodes.com December 2015 © Diodes Incorporated DMTH4004LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6), VGS = 10V TC = +25°C (Note 9) TC = +100°C ID 100 A 100 Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 200 A Maximum Continuous Body Diode Forward Current (Note 6) IS 100 A Avalanche Current, L = 0.2mH IAS 30 A Avalanche Energy, L = 0.2mH EAS 90 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 3.9 W Thermal Resistance, Junction to Ambient (Note 5) RJA 38 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 180 W Thermal Resistance, Junction to Case (Note 6) RJC 0.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current, TJ = +25°C IDSS — — 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 — 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 2.4 3 m Ω VGS = 10V, ID = 50A — 4 5 m Ω VGS = 4.5V, ID = 50A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 50A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 4,450 — pF VDS = 25V, VGS = 0V, f = 1MHz Output Capacitance Coss — 1,407 — pF Reverse Transfer Capacitance Crss — 74 — pF Gate Resistance Rg — 0.7 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 35 — nC VDS = 20V, ID = 30A Total Gate Charge (VGS = 10V) Qg — 83 — nC Gate-Source Charge Qgs — 10 — nC Gate-Drain Charge Qgd — 11.2 — nC Turn-On Delay Time tD(ON) — 5.9 — ns VGS = 10V, VDS = 20V, Rg = 1.6Ω, ID = 30A Turn-On Rise Time tr — 13.2 — ns Turn-Off Delay Time tD(OFF) — 25.8 — ns Turn-Off Fall Time tF — 7.9 — ns Body Diode Reverse Recovery Time tRR — 48 — ns IF = 50A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 72 — nC IF = 50A, di/dt = 100A/μs Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady state. 6. Thermal resistance from junction to solder point (on the exposed drain pin). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package Limited. |
Similar Part No. - DMTH4004LK3 |
|
Similar Description - DMTH4004LK3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |