DMT8012LK3

Document number: DS37918 Rev. 2 - 2

2 of 7

www.diodes.com

July 2015

© Diodes Incorporated

DMT8012LK3

Characteristic

Symbol

Value

Units

Drain-Source Voltage

80

V

Gate-Source Voltage

±20

V

44

28

A

Maximum Continuous Body Diode Forward Current (Note 5)

3

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

60

A

Avalanche Current, L=0.1mH

11.6

A

Avalanche Energy, L=0.1mH

10.2

mJ

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

2.7

W

Thermal Resistance, Junction to Ambient (Note 5)

47

°C/W

Total Power Dissipation (Note 6)

50

W

Thermal Resistance, Junction to Case (Note 6)

2.5

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

80

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Source Leakage

-

-

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

-

3

V

Static Drain-Source On-Resistance

-

12

17

m

Ω

-

18.2

22

Diode Forward Voltage

-

0.9

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

1,949

-

pF

f = 1MHz

Output Capacitance

-

177

-

Reverse Transfer Capacitance

-

10

-

Gate Resistance

-

0.7

-

Ω

-

15

-

nC

-

34

-

Gate-Source Charge

-

6

-

Gate-Drain Charge

-

4.5

-

Turn-On Delay Time

-

4.9

-

ns

Turn-On Rise Time

-

3.8

-

Turn-Off Delay Time

-

16.5

-

Turn-Off Fall Time

-

3.5

-

Body Diode Reverse Recovery Time

-

30.2

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

34.6

-

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.