NRVTS10110EMFST3G datasheet(3/5 Pages) ONSEMI

Part #	NRVTS10110EMFST3G

Description	Very Low Leakage Trench-based Schottky Rectifier

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Manufacturer	ONSEMI [ON Semiconductor]

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NTS10100EMFS, NRVTS10100EMFS

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TYPICAL CHARACTERISTICS

80

90

100 110 120 130 140 150 160 170

100

1,000

10,000

0.1

1

10

100

1.E−07

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

0

10

20304050

60708090

100

0.1

1.0

10.0

100.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

0.1

1.0

10.0

100.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 3. Typical Reverse Characteristics

Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

Figure 5. Typical Junction Capacitance

Figure 6. Current Derating

VR, REVERSE VOLTAGE (V)

TC, CASE TEMPERATURE (°C)

TA = 125°C

TA = 150°C

TA = 25°C

TJ = 25°C

RqJC = 2.0°C/W

Square Wave

DC

TA = 175°C

TA = −55°C

TA = 25°C

TA = −55°C

TA = 125°C

TA = 150°C

TA = 175°C

TA = 150°C

TA = 125°C

TA = 25°C

1.E−07

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

0

10

2030405060

708090 100

TA = 150°C

TA = 175°C

TA = 125°C

TA = 25°C

25

20

15

10

5

0

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