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NTS245ESF Datasheet(PDF) 2 Page - ON Semiconductor |
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NTS245ESF Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTS245ESF, NRVTS245ESF, NTSM245ESF, NRVTSM245ESF http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (TL = TBD°C) IO 2.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = TBD°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Storage and Operating Junction Temperature Range (Note 1) Tstg, TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 23 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 4) (IF = 2.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 125°C) VF 0.62 0.55 V Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 50 6 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. |
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