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OPA836IDBVT Datasheet(PDF) 6 Page - Texas Instruments

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Part # OPA836IDBVT
Description  Operational Amplifiers
Download  57 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

OPA836IDBVT Datasheet(HTML) 6 Page - Texas Instruments

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OPA836, OPA2836
SLOS712G – JANUARY 2011 – REVISED OCTOBER 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
VS– to VS+
Supply voltage
5.5
V
VI
Input voltage
VS– – 0.7
VS+ + 0.7
V
VID
Differential input voltage
1
V
II
Continuous input current
0.85
mA
IO
Continuous output current
60
mA
See Thermal Information: OPA836
Continuous power dissipation
and
Thermal Information: OPA2836
TJ
Maximum junction temperature
150
°C
TA
Operating free-air temperature
–40
125
°C
Tstg
Storage temperature
–65
150
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±6000
V(ESD)
Electrostatic discharge
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
V
Machine model
±200
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VS+
Single supply voltage
2.5
5
5.5
V
TA
Ambient temperature
–40
25
125
°C
7.4 Thermal Information: OPA836
OPA836
SOT23-6
WQFN-10
THERMAL METRIC(1)
UNIT
(DBV)
(RUN)
6 PINS
10 PINS
RθJA
Junction-to-ambient thermal resistance
194
145.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
129.2
75.1
°C/W
RθJB
Junction-to-board thermal resistance
39.4
38.9
°C/W
ψJT
Junction-to-top characterization parameter
25.6
13.5
°C/W
ψJB
Junction-to-board characterization parameter
38.9
104.5
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6
Submit Documentation Feedback
Copyright © 2011–2015, Texas Instruments Incorporated
Product Folder Links: OPA836 OPA2836


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