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NCP785B Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP785B Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 8 page NCP785B http://onsemi.com 5 Table 6. ELECTRICAL CHARACTERISTICS, VOUT = 12 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 1 mF, COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 11) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage DC VIN 35 450 V Output Voltage Accuracy TJ = 25°C, Iout = 100 mA, 35 V ≤ Vin ≤ 450 V VOUT 11.46 12 12.54 V −40°C ≤ TJ ≤ 85°C, Iout = 100 mA, 35 V ≤ Vin ≤ 450 V VOUT 11.4 12 12.6 V Line Regulation 35 V ≤ Vin ≤ 450 V, Iout = 100 mA RegLINE −0.5 0.1 +0.5 %/V Load Regulation 100 mA ≤ IOUT ≤ 10 mA, Vin = 35 V RegLOAD −1.0 0.66 +1.0 % Maximum Output Current (Note 12) 38 V ≤ Vin ≤ 450 V IOUT 11.5 mA Quiescent Current IOUT = 0, 35 V ≤ Vin ≤ 450 V IQ 12 18 mA Ground Current (Note 12) 35 V ≤ Vin ≤ 450 V 0 < IOUT ≤ 10 mA IGND 19 mA EN Pin High Threshold EN Pin Low Threshold VEN Voltage increasing VEN Voltage decreasing VEN_HI VEN_LO 1.4 0.8 V EN Pin Pull up Current (Note 13) Vin = 450 VDC IEN 5 mA EN Pin Voltage (Note 14) Vin = 450 VDC VEN 3.0 3.3 V Power Supply Rejection Ratio Vin = 340 VDC +1 Vpp modulation, Iout = 100 mA f = 1 kHz PSRR 70 dB Output Noise f = 10 kHz to 100 kHz Vin = 340 VDC, Iout = 100 mA VNOISE 280 mVrms Thermal Shutdown Temperature (Note 13) Temperature increasing from TJ = +25°C TSD 145 °C Thermal Shutdown Hysteresis (Note 13) Temperature falling from TSD TSDH − 10 − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 12.A proper heatsinking and/or low duty cycle pulse techniques are used to operate the device within the Safe Operating Area. 13.Guaranteed by design 14.Voltage present at the EN pin in case that this pin is left floating. It is generated by the internal EN Pin Pull−up Current. |
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