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54ABT16374 Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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54ABT16374 Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 6 page Absolute Maximum Ratings (Note 1) Storage Temperature −65˚C to +150˚C Ambient Temperature under Bias −55˚C to +125˚C Junction Temperature under Bias Ceramic −55˚C to +175˚C V CC Pin Potential to Ground Pin −0.5V to +7.0V Input Voltage (Note 2) −0.5V to +7.0V Input Current (Note 2) −30 mA to +5.0 mA Voltage Applied to Any Output in the Disabled or Power-Off State −0.5V to 5.5V in the HIGH State −0.5V to V CC Current Applied to Output in LOW State (Max) twice the rated I OL (mA) DC Latchup Source Current: OE Pin −350 mA (Across Comm Operating Range) Other Pins −500 mA Over Voltage Latchup (I/O) 10V Recommended Operating Conditions Free Air Ambient Temperature Military −55˚C to +125˚C Supply Voltage Military +4.5V to +5.5V Minimum Input Edge Rate ( ∆V/∆t) Data Input 50 mV/ns Enable Input 20 mV/ns Clock Input 100mV/ns Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: Either voltage limit or current limit is sufficient to protect inputs. DC Electrical Characteristics Symbol Parameter ABT16374 Units V CC Conditions Min Typ Max V IH Input HIGH Voltage 2.0 V Recognized HIGH Signal V IL Input LOW Voltage 0.8 V Recognized LOW Signal V CD Input Clamp Diode Voltage −1.2 V Min I IN = −18 mA V OH Output HIGH Voltage 54ABT 2.5 V Min I OH =−3 mA 54ABT 2.0 V Min I OH = −24 mA V OL Output LOW Voltage 54ABT 0.55 V Min I OL =48 mA I IH Input HIGH Current 5 µA Max V IN = 2.7V (Note 4) 5V IN =VCC I BVI Input HIGH Current Breakdown Test 7 µA Max V IN = 7.0V I IL Input LOW Current −5 µA Max V IN = 0.5V (Note 4) −5 V IN = 0.0V V ID Input Leakage Test 4.75 V 0.0 I ID = 1.9 µA All Other Pins Grounded I OZH Output Leakage Current 50 µA 0−5.5V V OUT = 2.7V; OE = 2.0V I OZL Output Leakage Current −50 µA 0−5.5V V OUT = 0.5V; OE = 2.0V I OS Output Short-Circuit Current −100 −275 mA Max V OUT = 0.0V I CEX Output High Leakage Current 50 µA Max V OUT =VCC I ZZ Bus Drainage Test 100 µA 0.0 V OUT = 5.5V; All Others VCC or GND I CCH Power Supply Current 2.0 mA Max All Outputs HIGH I CCL Power Supply Current 62 mA Max All Outputs LOW I CCZ Power Supply Current 2.0 mA Max OE = V CC; All Others at VCC or GND I CCT Additional I CC/Input Outputs Enabled 2.5 mA V I =VCC − 2.1V Outputs TRI-STATE 2.5 mA Max Enable Input V I =VCC − 2.1V Outputs TRI-STATE 2.5 mA Data Input V I =VCC − 2.1V All Others at V CC or GND I CCD Dynamic I CC No Load mA/ Max Outputs Open (Note 4) 0.30 MHz OE = GND, (Note 3) One Bit Toggling, 50% Duty Cycle Note 3: For 8-bit toggling, ICCD < 0.8 mA/MHz. Note 4: Guaranteed, but not tested. www.national.com 3 |
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