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MCH3333 Datasheet(PDF) 1 Page - ON Semiconductor |
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MCH3333 Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 4 page  MCH3333 Rev.0 I Page 1 of 4 I www.onsemi.com Ordering number : ENN7989 MCH3333 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --1.5 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --6.0 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2 ✕0.8mm) 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.4 V Forward Transfer Admittance yfs VDS=--10V, ID=--0.8A 1.38 2.3 S RDS(on)1 ID=--0.8A, VGS=--4V 215 280 mΩ Static Drain-to-Source On-State Resistance RDS(on)2 ID=--0.4A, VGS=--2.5V 290 410 mΩ Input Capacitance Ciss VDS=--10V, f=1MHz 285 pF Output Capacitance Coss VDS=--10V, f=1MHz 52 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr See specified Test Circuit. 21 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 35 ns Fall Time tf See specified Test Circuit. 28 ns Marking : YJ Continued on next page. © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: MCH3333/D |
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