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MBR2045MFS Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBR2045MFS
Description  Switch Mode Power Rectifiers
Download  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR2045MFS Datasheet(HTML) 2 Page - ON Semiconductor

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MBR2045MFS, NRVB2045MFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR, TC = 130°C)
IF(AV)
20
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
IFRM
40
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
400
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +150
°C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
EAS
150
mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
NOTE:
The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJC
1.6
°C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 15 A, TJ = 125°C)
(iF = 15 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 30 A, TJ = 25°C)
vF
0.35
0.44
0.46
0.51
0.41
0.49
0.58
0.61
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
200
0.3
300
0.6
mA
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.


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