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MBR2045MFS Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR2045MFS Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBR2045MFS, NRVB2045MFS http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 130°C) IF(AV) 20 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 135°C) IFRM 40 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 400 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +150 °C Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 150 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC − 1.6 °C/W ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 15 A, TJ = 125°C) (iF = 15 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) vF 0.35 0.44 0.46 0.51 0.41 0.49 0.58 0.61 V Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 200 0.3 300 0.6 mA 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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