NRVB8H100MFSWFT1G datasheet(2/4 Pages) ONSEMI

Part #	NRVB8H100MFSWFT1G

Description	Switch Mode Power Rectifiers

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Manufacturer	ONSEMI [ON Semiconductor]

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MBR8H100MFS, NRVB8H100MFS

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Thermal Resistance, Junction−to−Case, Steady State

(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)

RθJC

−

2.2

°C/W

ELECTRICAL CHARACTERISTICS

Instantaneous Forward Voltage (Note 1)

(iF = 8 Amps, TJ = 125°C)

(iF = 8 Amps, TJ = 25°C)

vF

0.68

0.81

0.76

0.90

V

Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

iR

180

0.06

300

2

mA

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle ≤ 2.0%.

TYPICAL CHARACTERISTICS

Figure 1. Typical Instantaneous Forward

Characteristics

Figure 2. Maximum Instantaneous Forward

Characteristics

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

1.0

0.6

0.4

0.2

0

0.1

1

10

100

0.6

0.4

0.2

0

0.1

1

10

100

Figure 3. Typical Reverse Characteristics

Figure 4. Maximum Reverse Characteristics

VR, INSTANTANEOUS REVERSE VOLTAGE (V)

60

50

40

30

20

10

0

1.E−12

100

50

40

30

20

10

0

1.2

TA = 175°C

125

°C

150

°C

25

°C

−40

°C

0.8

1.0

1.2

TA = 175°C

125

°C

150

°C

25

°C

−40

°C

1.E−09

1.E−08

1.E−07

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

TA = 175°C

TA = 150°C

TA = 125°C

TA = 25°C

TA = −40°C

TA = 175°C

TA = 150°C

TA = 125°C

TA = 25°C

TA = −40°C

1.E−11

1.E−09

1.E−08

1.E−07

1.E−06

1.E−05

1.E−04

1.E−03

1.E−02

1.E−01

1.E+00

0.8

100

90

80

70

1.E−10

1.E−11

60

80

70

90

1.E−10

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