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NVTFS4C08NWFTWG Datasheet(PDF) 1 Page - ON Semiconductor |
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NVTFS4C08NWFTWG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 1 1 Publication Order Number: NVTFS4C08N/D NVTFS4C08N Power MOSFET 30 V, 5.9 m W, 55 A, Single N−Channel, m8FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVTFS4C08NWF − Wettable Flanks Product • NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Notes 1, 2, 4) Steady State TA = 25°C ID 17 A TA = 100°C 12 Power Dissipation RqJA (Note 1, 2, 4) TA = 25°C PD 3.1 W TA = 100°C 1.6 Continuous Drain Current RqJC (Note 1, 3, 4) TA = 25°C ID 55 TA = 100°C 39 A Power Dissipation RqJC (Note 1, 3, 4) TA = 25°C PD 31 W TA = 100°C 15 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 253 A Operating Junction and Storage Temperature TJ, Tstg −55 to +175 °C Source Current (Body Diode) IS 28 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL = 20 Apk, L = 0.1 mH) EAS 20 mJ Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Notes 1 and 4) RqJC 4.9 °C/W Junction−to−Ambient – Steady State (Notes 1 and 2) RqJA 48 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2 2 oz. Cu pad. 3. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 30 V 5.9 m W @ 10 V 55 A N−Channel MOSFET D (5−8) S (1,2,3) G (4) WDFN8 ( m8FL) CASE 511AB MARKING DIAGRAM 9.0 m W @ 4.5 V (Note: Microdot may be in either location) 1 1 XXXX AYWW G G D D D D S S S G See detailed ordering and shipping information on page 5 of this data sheet. ORDERING INFORMATION 4C08 = Specific Device Code for NVMTS4C08N 08WF = Specific Device Code of NVTFS4C08NWF A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package |
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