NVTFS4C08N

http://onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

13.8

mV/

°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.3

2.2

V

Negative Threshold Temperature Coefficient

5.0

mV/

°C

Drain−to−Source On Resistance

4.7

5.9

m

W

7.2

9.0

Forward Transconductance

42

S

Gate Resistance

1.0

W

CHARGES AND CAPACITANCES

Input Capacitance

1113

pF

Output Capacitance

702

Reverse Transfer Capacitance

39

Capacitance Ratio

0.035

Total Gate Charge

8.4

nC

Threshold Gate Charge

1.8

Gate−to−Source Charge

3.5

Gate−to−Drain Charge

3.3

Gate Plateau Voltage

3.4

V

Total Gate Charge

18.2

nC

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

9.0

ns

Rise Time

33

Turn−Off Delay Time

15

Fall Time

4.0

Turn−On Delay Time

7.0

ns

Rise Time

26

Turn−Off Delay Time

19

Fall Time

3.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.79

1.1

V

0.66

Reverse Recovery Time

28.3

ns

Charge Time

14.5

Discharge Time

13.8

Reverse Recovery Charge

15.3

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.