NVTFS4C05N datasheet(1/6 Pages) ONSEMI

Part #	NVTFS4C05N

Description	Single N- Channel Power MOSFET

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July, 2014 − Rev. 2

1

Publication Order Number:

NVTFS4C05N/D

NVTFS4C05N

Power MOSFET

30 V, 3.6 m

W, 102 A, Single N−Channel,

m8FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• NVTFS4C05NWF − Wettable Flanks Product

• NVT Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Notes 1, 2, 4)

Steady

State

TA = 25°C

ID

22

A

TA = 100°C

15.7

Power Dissipation RqJA

(Notes 1, 2, 4)

TA = 25°C

PD

3.2

W

TA = 100°C

1.6

Continuous Drain

Current RyJC

(Notes 1, 3, 4)

TC = 25°C

ID

102

A

TC = 100°C

72

Power Dissipation

RyJC (Notes 1, 3, 4)

TC = 25°C

PD

68

W

TC = 100°C

34

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

433

A

Operating Junction and Storage Temperature

TJ,

Tstg

−55 to

+175

°C

Source Current (Body Diode)

IS

65

A

Single Pulse Drain−to−Source Avalanche Energy

(TJ = 25°C, VGS = 10 V, IL = 18.8 A, L = 0.5 mH)

EAS

88

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain) (Notes 1, 3)

RyJC

2.2

°C/W

Junction−to−Ambient – Steady State

(Notes 1, 2)

RqJA

47

1. The entire application environment impacts the thermal resistance values

shown; they are not constants and are valid for the specific conditions noted.

2. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad.

3. Assumes heat−sink sufficiently large to maintain constant case temperature

independent of device power.

4. Continuous DC current rating. Maximum current for pulses as long as one

second is higher but dependent on pulse duration and duty cycle.

http://onsemi.com

V(BR)DSS

RDS(on) MAX

ID MAX

30 V

3.6 m

W @ 10 V

102 A

N−Channel MOSFET

D (5−8)

S (1,2,3)

G (4)

WDFN8

(

m8FL)

CASE 511AB

MARKING DIAGRAM

5.1 m

W @ 4.5 V

(Note: Microdot may be in either location)

1

4C05

= Specific Device Code for

NVMTS4C05N

05WF

= Specific Device Code of

NVTFS4C05NWF

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

1

XXXX

AYWW

G

D

S

G

See detailed ordering, marking and shipping information on

page 5 of this data sheet.

ORDERING INFORMATION

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