NVA4153N datasheet(2/6 Pages) ONSEMI

Part #	NVA4153N

Description	Single N?묬hannel Small Signal MOSFET

Download	6 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 6 page

NVA4153N, NVE4153N

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

20

26

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

18.4

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V, VDS = 16 V

100

nA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±4.5 V

±1.0

mA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

0.45

0.76

1.1

V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

−2.15

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 4.5 V, ID = 600 mA

127

230

m

W

VGS = 2.5 V, ID = 500 mA

170

275

VGS = 1.8 V, ID = 350 mA

242

700

VGS = 1.5 V, ID = 40 mA

500

9500

Forward Transconductance

gFS

VDS = 10 V, ID = 400 mA

1.4

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = 16 V

110

pF

Output Capacitance

COSS

16

Reverse Transfer Capacitance

CRSS

12

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 10 V,

ID = 0.2 A

1.82

nC

Threshold Gate Charge

QG(TH)

0.2

Gate−to−Source Charge

QGS

0.3

Gate−to−Drain Charge

QGD

0.42

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDD = 10 V,

ID = 0.2 A, RG = 10 W

3.7

ns

Rise Time

tr

4.4

Turn−Off Delay Time

td(OFF)

25

Fall Time

tf

7.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 200 mA

TJ = 25°C

0.67

1.1

V

TJ = 125°C

0.54

2. Pulse Test: pulse width

≤ 300ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

ORDERING INFORMATION

Device

Marking

(XX)

Package

Shipping†

NVA4153NT1G

VR

SC−75 / SOT−416

(Pb−Free)

3000 / Tape & Reel

NVE4153NT1G

VP

SC−89

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Similar Part No. - NVA4153N

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NVA4153N	77Kb / 6P	Small Signal MOSFET December, 2014 ??Rev. 7
ON Semiconductor	NVA4153NT1G	77Kb / 6P	Small Signal MOSFET December, 2014 ??Rev. 7

More results

Similar Description - NVA4153N

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	NTR5103N	109Kb / 5P	N?묬hannel Small Signal MOSFET March, 2014 ??Rev. 0
	NTZD3158P	110Kb / 5P	Dual P?묬hannel Small Signal MOSFET April, 2013 ??Rev. 0
	2N7002E	104Kb / 5P	Small Signal MOSFET 60 V, 310 mA, Single, N?묬hannel, SOT??3 April, 2007 ??Rev. 1
	2N7002W	107Kb / 5P	Small Signal MOSFET 60 V, 340 mA, Single, N?묬hannel, SC??0 April, 2007 ??Rev. 2
Leshan Radio Company	LNTS4409NWT1G	216Kb / 5P	Small Signal MOSFET 25 V, 0.75 A, Single, N?묬hannel, ESD Protection
ON Semiconductor	NTJS4405N	131Kb / 5P	Small Signal MOSFET 25 V, 1.2 A, Single, N?묬hannel, SC??8 February, 2006 ??Rev. 4
	NVR4003NT3G	105Kb / 5P	Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3 June, 2012 ??Rev. 3
	NTR4003N	67Kb / 5P	Small Signal MOSFET 30 V, 0.56 A, Single N?묬hannel, SOT??3 May, 2006 ??Rev. 0
	2N7002K	106Kb / 5P	Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3 July, 2008 ??Rev. 4
	2N7002KT3G	103Kb / 6P	Small Signal MOSFET 60 V, 380 mA, Single, N?묬hannel, SOT??3 February, 2013 ??Rev. 11

More results

NVA4153N Datasheet(PDF) 2 Page - ON Semiconductor

NVA4153N Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - NVA4153N

Similar Description - NVA4153N

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL