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NTND31211PZ Datasheet(PDF) 2 Page - ON Semiconductor |
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NTND31211PZ Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NTND31211PZ www.onsemi.com 2 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient (Note 3) Steady State t ≤ 5 s RqJA 998 751 °C/W 3. Surface-mounted on FR4 board using the minimum recommended pad size, 1 oz Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −20 V Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = −5 V TJ = 25°C −50 nA TJ = 85°C −200 nA VGS = 0 V, VDS = −16 V TJ = 25°C −100 Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = ±5.0 V ±100 nA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −0.4 −1.0 V Drain-to-Source On Resistance RDS(ON) VGS = −4.5 V, ID = −100 mA 2.1 5.0 W VGS = −2.5 V, ID = −50 mA 2.7 6.0 VGS = −1.8 V, ID = −20 mA 3.4 7.0 VGS = −1.5 V, ID = −10 mA 4.2 10.0 Forward Transconductance gFS VDS = −5.0 V, ID = −125 mA 0.35 S Forward Diode Voltage VSD VGS = 0 V, IS = −10 mA −0.6 −1.0 V CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = −15 V 12.8 pF Output Capacitance COSS 2.8 Reverse Transfer Capacitance CRSS 2.0 SWITCHING CHARACTERISTICS, VGS = 4.5 V Turn-On Delay Time td(ON) VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W 37 ns Rise Time tr 71 Turn-Off Delay Time td(OFF) 280 Fall Time tf 171 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Package Shipping† NTND31211PZTAG XLLGA6 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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