NL17SH34 datasheet(3/5 Pages) ONSEMI

Part #	NL17SH34

Description	Single Buffer

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Manufacturer	ONSEMI [ON Semiconductor]

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NL17SH34

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DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

VCC

(V)

TA = 255C

TA v 855C

*555C to 1255C

Unit

Min

Typ

Max

Min

Max

Min

Max

VIH

High−Level Input

Voltage

1.65 to

2.0

0.75 x

VCC

0.75 x

VCC

V

2.3 to

5.5

0.70 x

VCC

0.70 x

VCC

VIL

Low−Level Input

Voltage

1.65 to

2.0

0.25 x

VCC

0.25 x

VCC

0.25 x

VCC

V

2.3 to

5.5

0.30 x

VCC

0.30 x

VCC

0.30 x

VCC

VOH

High−Level Output

Voltage

VIN = VIH or VIL

IOH = −50 mA

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

1.9

2.9

4.4

1.9

2.9

4.4

V

VIN = VIH or VIL

IOH = −4 mA

IOH = −8 mA

3.0

4.5

2.58

3.94

2.48

3.80

2.34

3.66

VOL

Low−Level Output

Voltage

VIN = VIH or VIL

IOL = 50 mA

2.0

3.0

4.5

0.0

0.1

V

VIN = VIH or VIL

IOL = 4 mA

IOL = 8 mA

3.0

4.5

0.36

0.44

0.52

IIN

Input Leakage Current

VIN = 5.5 V or GND

0 to 5.5

$0.1

$1.0

mA

ICC

Quiescent Supply

Current

VIN = VCC or GND

5.5

1.0

10

40

mA

AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)

Symbol

Parameter

VCC

(V)

Test

Conditions

TA = 255C

TA v 855C

*555C to 1255C

Unit

Min

Typ

Max

Min

Max

Min

Max

tPLH,

tPHL

Propagation Delay,

A to Y

3.0 to 3.6

CL = 15 pF

CL = 50 pF

4.5

6.4

7.1

10.6

8.5

12.0

10.0

14.5

ns

4.5 to 5.5

CL = 15 pF

CL = 50 pF

3.5

4.5

5.5

7.5

6.5

8.5

8.0

10.0

CIN

Input Capacitance

4.0

10

pF

CPD

Power Dissipation

Capacitance (Note 6)

5.0

8.0

pF

6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic

power consumption; PD = CPD VCC2 fin + ICC VCC.

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