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NL17SH34 Datasheet(PDF) 3 Page - ON Semiconductor |
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NL17SH34 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 5 page NL17SH34 http://onsemi.com 3 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions VCC (V) TA = 255C TA v 855C *555C to 1255C Unit Min Typ Max Min Max Min Max VIH High−Level Input Voltage 1.65 to 2.0 0.75 x VCC 0.75 x VCC V 2.3 to 5.5 0.70 x VCC 0.70 x VCC VIL Low−Level Input Voltage 1.65 to 2.0 0.25 x VCC 0.25 x VCC 0.25 x VCC V 2.3 to 5.5 0.30 x VCC 0.30 x VCC 0.30 x VCC VOH High−Level Output Voltage VIN = VIH or VIL IOH = −50 mA 2.0 3.0 4.5 1.9 2.9 4.4 2.0 3.0 4.5 1.9 2.9 4.4 1.9 2.9 4.4 V VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 2.48 3.80 2.34 3.66 VOL Low−Level Output Voltage VIN = VIH or VIL IOL = 50 mA 2.0 3.0 4.5 0.0 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 V VIN = VIH or VIL IOL = 4 mA IOL = 8 mA 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 IIN Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 $0.1 $1.0 $1.0 mA ICC Quiescent Supply Current VIN = VCC or GND 5.5 1.0 10 40 mA AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Symbol Parameter VCC (V) Test Conditions TA = 255C TA v 855C *555C to 1255C Unit Min Typ Max Min Max Min Max tPLH, tPHL Propagation Delay, A to Y 3.0 to 3.6 CL = 15 pF CL = 50 pF 4.5 6.4 7.1 10.6 8.5 12.0 10.0 14.5 ns 4.5 to 5.5 CL = 15 pF CL = 50 pF 3.5 4.5 5.5 7.5 6.5 8.5 8.0 10.0 CIN Input Capacitance 4.0 10 10 10 pF CPD Power Dissipation Capacitance (Note 6) 5.0 8.0 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. |
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