1

Publication Order Number :

SCH1439/D

www.onsemi.com

© Semiconductor Components Industries, LLC, 2015

September 2015 - Rev. 2

SCH1439

This

low-profile

high-power

MOSFET

is

produced

using

ON

Semiconductor’s trench technology, which is specifically designed to

minimize gate charge and ultra low on resistance. This device is suitable for

applications with low gate charge driving or ultra low on resistance

Features

 Low On-Resistance

 4V drive

 ESD Diode-Protected Gate

 Pb-Free, Halogen Free and RoHS compliance

 Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

Typical Applications

 Load Switch

 Battery Switch

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

30

V

Gate to Source Voltage

VGSS

20

V

Drain Current (DC)

ID

3.5

A

Drain Current (Pulse)

PW

 10s, duty cycle  1%

IDP

14

A

Power Dissipation

When mounted on ceramic substrate

(900mm

PD

1

W

Junction Temperature

Tj

150

C

Storage Temperature

Tstg

55 to +150

C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction to Ambient

RJA

125

C/W

When mounted on ceramic substrate

(900mm

Power MOSFET

30V, 72mΩ, 3.5A, Single N-Channel

VDSS

RDS(on) Max

ID Max

30V

72mΩ@ 10V

3.5A

110mΩ@ 4.5V

128mΩ@ 4V

ELECTRICAL CONNECTION

N-Channel

PACKING TYPE : TL

MARKING

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

TL

3

4

1, 2, 5, 6

1: Drain

2: Drain

3: Gate

4: Source

5: Drain

6: Drain

ZQ