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SCH1439-TL-W Datasheet(PDF) 1 Page - ON Semiconductor |
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SCH1439-TL-W Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page 1 Publication Order Number : SCH1439/D www.onsemi.com © Semiconductor Components Industries, LLC, 2015 September 2015 - Rev. 2 SCH1439 This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance 4V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt) Typical Applications Load Switch Battery Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25 C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) PW 10s, duty cycle 1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm 2 0.8mm) PD 1 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient RJA 125 C/W When mounted on ceramic substrate (900mm 2 0.8mm) Power MOSFET 30V, 72mΩ, 3.5A, Single N-Channel VDSS RDS(on) Max ID Max 30V 72mΩ@ 10V 3.5A 110mΩ@ 4.5V 128mΩ@ 4V ELECTRICAL CONNECTION N-Channel PACKING TYPE : TL MARKING ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. TL 3 4 1, 2, 5, 6 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6: Drain ZQ |
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