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EM484M3244VBE Datasheet(PDF) 5 Page - Eorex Corporation

Part # EM484M3244VBE
Description  Synchronous DRAM
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Manufacturer  EOREX [Eorex Corporation]
Direct Link  http://www.eorex.com
Logo EOREX - Eorex Corporation

EM484M3244VBE Datasheet(HTML) 5 Page - Eorex Corporation

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Note: Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could
Capacitance (VCC=3.3V, f=1MHz, TA=25°C)
Recommended DC Operating Conditions (TA=0°C ~70°C)
Note: * All voltages referred to VSS.
eorex
Absolute Maximum Rating
EM484M3244VBE
cause permanent damage. The device is not meant to be operated under conditions outside the
limits described in the operational section of this specification. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.
* VIH (max.) = 5.6V for pulse width 3ns
* VIL (min.) = -2.0V for pulse width 3ns
Dec. 2013
www.eorex.com
5/18
Symbol
Item
Rating
Units
VIN, VOUT
Input, Output Voltage
-0.5 ~ +4.6
V
VDD, VDDQ
Power Supply Voltage
-0.5 ~ +4.6
V
TOP
Operating Temperature Range
Commercial
0 ~ +70
°C
Extended
-25 ~ +85
TSTG
Storage Temperature Range
-55 ~ +150
°C
PD
Power Dissipation
1
W
IOS
Short Circuit Current
50
mA
Symbol
Parameter
Min.
Typ.
Max.
Units
VDD
Power Supply Voltage
3.0
3.3
3.6
V
VDDQ
Power Supply Voltage (for I/O Buffer)
3.0
3.3
3.6
V
VIH
Input Logic High Voltage
2.0
VDD+0.3
V
VIL
Input Logic Low Voltage
-0.3
0.8
V
Symbol
Parameter
Min.
Typ.
Max.
Units
CCLK
Clock Capacitance
2.0
3.5
pF
CI
Input Capacitance for CLK, CKE, Address,
/CS, /RAS, /CAS, /WE, DQML, DQMU
2.0
3.5
pF
CO
Input/Output Capacitance
3.0
5.5
pF


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