80812 TKIM/O2710SB TKIM TC-00002519 No. A1817-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

September, 2013

SB80W10T

Schottky Barrier Diode

100V, 8A, Low IR, Monolithic Dual TP Common Cathode

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

• Package : TP

• Package : TP-FA

• JEITA, JEDEC : SC-64, TO-251

• JEITA, JEDEC : SC-63, TO-252

• Minimum Packing Quantity : 500 pcs./bag

• Minimum Packing Quantity : 700 pcs./reel

Marking

Packing Type (TP-FA) : TL

Electrical Connection

(TP, TP-FA)

TL

6.5

5.0

2.3

0.5

12

4

3

0.85

0.7

1.2

0.6

0.5

2.3

2.3

1 : Anode

2 : Cathode

3 : Anode

4 : Cathode

TP

6.5

5.0

2.3

0.5

12

4

3

0.85

0.6

0.5

1.2

2.3

2.3

0 to 0.2

1 : Anode

2 : Cathode

3 : Anode

4 : Cathode

TP-FA

S80W

10

LOT No.

13

2

SB80W10T-H

SB80W10T-TL-H

Features

•

VF max=0.8V

•

IR max=0.1mA

•

Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Repetitive Peak Reverse Voltage

VRRM

100

V

Nonrepetitive Peak Reverse Surge Voltage

105

V

Average Output Current

50Hz resistive load, sine wave Tc=62°C

8

A

50Hz resistive load, sine wave Tc=121°C

4

A

Surge Forward Current

50Hz sine wave, 1 cycle

40

A

Junction Temperature

Tj

--55 to +150

°C

Storage Temperature

Tstg

--55 to +150

°C

Note)

*1. Indicates the total value

*2. Value per element

Package Dimensions

Package Dimensions

unit : mm (typ)

unit : mm (typ)

7518-001

7003-002

Ordering number : ENA1817A