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MBRJ20100CTG Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRJ20100CTG Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page MBRJ20100CTG http://onsemi.com 2 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR), TC = 133°C Total Device IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133°C IFRM 20 A Non−repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg − 65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10000 V/ms RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Per Figure 4 Viso1 4500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Rating Symbol Value Unit Maximum Thermal Resistance Junction to Case Junction to Ambient RqJC RqJA 3.9 105 °C/W Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Max Unit Maximum Instantaneous Forward Voltage (Note 3) (iF = 10 Amp, TC = 25°C) (iF = 10 Amp, TC = 125°C) (iF = 20 Amp, TC = 25°C) (iF = 20 Amp, TC = 125°C) vF 0.85 0.75 0.95 0.85 V Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR 0.15 150 mA 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode 0.01 0.1 1.0 10 120 100 80 60 40 20 0 VR, REVERSE VOLTAGE (VOLTS) TJ = 150°C TJ = 125°C TJ = 100°C TJ = 25°C 0.5 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.0 3.0 5.0 10 20 50 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ = 25°C 100 °C 150 °C |
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