MBRJ20100CTG

http://onsemi.com

2

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V

Average Rectified Forward Current

Total Device

10

20

A

Peak Repetitive Forward Current

20

A

Non−repetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

150

A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

0.5

A

Operating Junction and Storage Temperature Range (Note 1)

− 65 to +175

°C

dv/dt

10000

V/ms

Per Figure 4

4500

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Rating

Symbol

Value

Unit

Maximum Thermal Resistance

Junction to Case

Junction to Ambient

3.9

105

°C/W

Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds

260

°C

Characteristic

Symbol

Max

Unit

Maximum Instantaneous Forward Voltage (Note 3)

0.85

0.75

0.95

0.85

V

Maximum Instantaneous Reverse Current (Note 3)

0.15

150

mA

2. Proper strike and creepage distance must be provided.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

Figure 1. Typical Forward Voltage Per Diode

Figure 2. Typical Reverse Current Per Diode

0.01

0.1

1.0

10

120

100

80

60

40

20

0

0.5

0

1.0

3.0

5.0

10

20

50

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

100

°C

150

°C