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NTMFD4C86N Datasheet(PDF) 7 Page - ON Semiconductor |
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NTMFD4C86N Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 12 page NTMFD4C86N www.onsemi.com 7 TYPICAL CHARACTERISTICS − Q1 QT Figure 9. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge QG, TOTAL GATE CHARGE (nC) 10 4 2 0 0 2 4 6 8 12 Figure 10. Diode Forward Voltage vs. Current VSD, SOURCE−TO−DRAIN VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0 2 6 8 12 14 18 20 VGS = 45 V VDS = 15 V ID = 30 A TJ = 25°C QGS QGD 68 TJ = 25°C 4 10 16 0.3 0.2 0.1 10 Figure 11. Resistive Switching Time Variation vs. Gate Resistance RG, GATE RESISTANCE (W) 10 1 1 10 100 1000 Figure 12. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 VGS = 10 V VDS = 15 V ID = 15 A tf tr td(on) td(off) 100 10 1 0.1 0.1 1 100 1000 10 VGS ≤ 10 V Single Pulse TC = 25°C 10 ms RDS(on) Limit Thermal Limit Package Limit 100 ms 1 ms 10 ms dc Figure 13. Thermal Characteristics PULSE TIME (sec) 0.01 0.001 1 0.0001 0.1 0.00001 10 0.000001 0.001 0.1 1 10 100 100 1000 50% Duty Cycle Single Pulse 20% 10% 5% 2% 1% 0.01 PCB Cu Area 650 mm2 PCB Cu thk 1 oz |
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