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MCH6663-TL-H Datasheet(PDF) 2 Page - ON Semiconductor |
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MCH6663-TL-H Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page MCH6663 www.onsemi.com 2 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value Unit min typ max [N-channel] Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 2.6 V Forward Transconductance gFS VDS=10V, ID=0.9A 1.1 S Static Drain to Source On-State Resistance RDS(on)1 ID=0.9A, VGS=10V 145 188 m Ω RDS(on)2 ID=0.5A, VGS=4.5V 245 343 m Ω RDS(on)3 ID=0.5A, VGS=4V 270 378 m Ω Input Capacitance Ciss VDS=10V, f=1MHz 88 pF Output Capacitance Coss 19 pF Reverse Transfer Capacitance Crss 11 pF Turn-ON Delay Time td(on) See specified Test Circuit 3.4 ns Rise Time tr 3.6 ns Turn-OFF Delay Time td(off) 10.5 ns Fall Time tf 4.0 ns Total Gate Charge Qg VDS=15V, VGS=10V, ID=1.8A 2.0 nC Gate to Source Charge Qgs 0.33 nC Gate to Drain “Miller” Charge Qgd 0.29 nC Forward Diode Voltage VSD IS=1.8A, VGS=0V 0.86 1.2 V [P-channel] Drain to Source Breakdown Voltage V(BR)DSS ID=−1mA, VGS=0V −30 V Zero-Gate Voltage Drain Current IDSS VDS=−30V, VGS=0V −1 μA Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=−10V, ID=−1mA −1.2 −2.6 V Forward Transconductance gFS VDS=−10V, ID=−0.8A 1.3 S Static Drain to Source On-State Resistance RDS(on)1 ID=−0.8A, VGS=−10V 250 325 m Ω RDS(on)2 ID=−0.4A, VGS=−4.5V 397 555 m Ω RDS(on)3 ID=−0.4A, VGS=−4V 458 641 m Ω Input Capacitance Ciss VDS=−10V, f=1MHz 82 pF Output Capacitance Coss 22 pF Reverse Transfer Capacitance Crss 16 pF Turn-ON Delay Time td(on) See specified Test Circuit 4.0 ns Rise Time tr 3.3 ns Turn-OFF Delay Time td(off) 12 ns Fall Time tf 5.4 ns Total Gate Charge Qg VDS=−15V, VGS=−10V, ID=−1.5A 2.2 nC Gate to Source Charge Qgs 0.36 nC Gate to Drain “Miller” Charge Qgd 0.49 nC Forward Diode Voltage VSD IS=−1.5A, VGS=0V −0.9 −1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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