MCH6663

www.onsemi.com

2

Electrical Characteristics

at Ta

= 25°C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

[N-channel]

Drain to Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

1

μA

Gate to Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Gate Threshold Voltage

VGS(th)

VDS=10V, ID=1mA

1.2

2.6

V

Forward Transconductance

gFS

VDS=10V, ID=0.9A

1.1

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=0.9A, VGS=10V

145

188

m

Ω

RDS(on)2

ID=0.5A, VGS=4.5V

245

343

m

Ω

RDS(on)3

ID=0.5A, VGS=4V

270

378

m

Ω

Input Capacitance

Ciss

VDS=10V, f=1MHz

88

pF

Output Capacitance

Coss

19

pF

Reverse Transfer Capacitance

Crss

11

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit

3.4

ns

Rise Time

tr

3.6

ns

Turn-OFF Delay Time

td(off)

10.5

ns

Fall Time

tf

4.0

ns

Total Gate Charge

Qg

VDS=15V, VGS=10V, ID=1.8A

2.0

nC

Gate to Source Charge

Qgs

0.33

nC

Gate to Drain “Miller” Charge

Qgd

0.29

nC

Forward Diode Voltage

VSD

IS=1.8A, VGS=0V

0.86

1.2

V

[P-channel]

Drain to Source Breakdown Voltage

V(BR)DSS

ID=−1mA, VGS=0V

−30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=−30V, VGS=0V

−1

μA

Gate to Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Gate Threshold Voltage

VGS(th)

VDS=−10V, ID=−1mA

−1.2

−2.6

V

Forward Transconductance

gFS

VDS=−10V, ID=−0.8A

1.3

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=−0.8A, VGS=−10V

250

325

m

Ω

RDS(on)2

ID=−0.4A, VGS=−4.5V

397

555

m

Ω

RDS(on)3

ID=−0.4A, VGS=−4V

458

641

m

Ω

Input Capacitance

Ciss

VDS=−10V, f=1MHz

82

pF

Output Capacitance

Coss

22

pF

Reverse Transfer Capacitance

Crss

16

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit

4.0

ns

Rise Time

tr

3.3

ns

Turn-OFF Delay Time

td(off)

12

ns

Fall Time

tf

5.4

ns

Total Gate Charge

Qg

VDS=−15V, VGS=−10V, ID=−1.5A

2.2

nC

Gate to Source Charge

Qgs

0.36

nC

Gate to Drain “Miller” Charge

Qgd

0.49

nC

Forward Diode Voltage

VSD

IS=−1.5A, VGS=0V

−0.9

−1.5

V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.