1

Publication Order Number :

MCH6663/D

www.onsemi.com

©

Semiconductor Components Industries, LLC, 2015

March 2015 - Rev. 3

ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of this data sheet.

MCH6663

Features

• 4V Drive

• Complementary N-Channel and P-Channel MOSFET

• Pb-Free, Halogen Free and RoHS Compliance

Specifications

Absolute Maximum Ratings

at Ta = 25

°C

Parameter

Symbol

N-channel

P-channel

Unit

Drain to Source Voltage

VDSS

30

−30

V

Gate to Source Voltage

VGSS

±20

±20

V

Drain Current (DC)

ID

1.8

−1.5

A

Drain Current (Pulse)

PW

≤10μs, duty cycle≤1%

IDP

7.2

−6

A

Power Dissipation

When mounted on ceramic substrate

(900mm

PD

0.8

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Ambient

RθJA

156.25

°C/W

When mounted on ceramic substrate

(900mm

Power MOSFET

30V, 188m

Ω, 1.8A, −30V, 325mΩ, −1.5A,

Complementary Dual

VDSS

RDS(on) Max

ID Max

N-Ch

30V

188 mΩ@ 10V

1.8A

343 mΩ@ 4.5V

378 mΩ@ 4V

P-Ch

−30V

325 mΩ@

−10V

−1.5A

555 mΩ@

−4.5V

641 mΩ@

−4V

Electrical Connection

N-Channel and P-Channel

Packing Type : TL

Marking

65

4

13

2

1:Source1

2:Gate1

3:Drain2

4:Source2

5:Gate2

6:Drain1

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

TL