March 10,2014-REV.00

Page 2

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

400

-

-

V

Gate Threshold Voltage

2

2.67

4

V

Drain-Source On-State Resistance

-

0.8

0.95

Ω

Zero Gate Voltage Drain Current

-

0.01

1.0

uA

Gate-Source Leakage Current

-

+10

+100

nA

Diode Forward Voltage

-

0.92

1.4

V

Dynamic

(Note 4)

Total Gate Charge

(Note 2,3)

-

11.4

-

nC

Gate-Source Charge

-

4.2

-

Gate-Drain Charge

-

3.5

-

Input Capacitance

Ciss

f=1.0MHZ

-

553

-

pF

Output Capacitance

Coss

-

78

-

Reverse Transfer Capacitance

Crss

-

1.4

-

Turn-On Delay Time

(Note 2,3)

-

11

-

ns

Turn-On Rise Time

-

26

-

Turn-Off Delay Time

-

22

-

Turn-Off Fall Time

-

25

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

---

-

-

6

A

Maximum Pulsed Drain-Source

Diode Forward Current

---

-

-

24

A

Reverse Recovery Time

trr

(Note 2)

-

255

330

ns

Reverse Recovery Charge

Qrr

-

1.5

2

uC

NOTES :

1.

2.

Pulse width<300us, Duty cycle<2%

3.

Essentially independent of operating temperature typical characteristics.

4.

Guaranteed by design, not subject to production testing