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CPH3455-TL-H Datasheet(PDF) 2 Page - ON Semiconductor

Part # CPH3455-TL-H
Description  Single N-Channel Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CPH3455-TL-H Datasheet(HTML) 2 Page - ON Semiconductor

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CPH3455
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2
ELECTRICAL CHARACTERISTICS at Ta
= 25°C (Note 3)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
35
V
Zero-Gate Voltage Drain Current
IDSS
VDS=35V, VGS=0V
1
μA
Gate to Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transconductance
gFS
VDS=10V, ID=1.5A
1.7
S
Static Drain to Source On-State
Resistance
RDS(on)1
ID=1.5A, VGS=10V
80
104
m
Ω
RDS(on)2
ID=0.75A, VGS=4.5V
123
173
m
Ω
RDS(on)3
ID=0.75A, VGS=4V
148
208
m
Ω
Input Capacitance
Ciss
VDS=20V, f=1MHz
186
pF
Output Capacitance
Coss
36
pF
Reverse Transfer Capacitance
Crss
22
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
4.2
ns
Rise Time
tr
4.7
ns
Turn-OFF Delay Time
td(off)
15
ns
Fall Time
tf
5.7
ns
Total Gate Charge
Qg
VDS=20V, VGS=10V, ID=3A
4
nC
Gate to Source Charge
Qgs
0.9
nC
Gate to Drain “Miller” Charge
Qgd
0.7
nC
Forward Diode Voltage
VSD
IS=3A, VGS=0V
0.86
1.2
V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
PW=10μs
D.C.≤1%
10V
0V
VIN
P.G
50Ω
G
S
ID=1.5A
RL=10Ω
VDD=15V
VOUT
VIN
D
CPH3455


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