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NVMFS5C646NLWFT3G Datasheet(PDF) 1 Page - ON Semiconductor |
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NVMFS5C646NLWFT3G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2015 February, 2015 − Rev. 1 1 Publication Order Number: NVMFS5C646NL/D NVMFS5C646NL Power MOSFET 60 V, 4.7 m W, 93 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C646NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Notes 1, 3) Steady State TC = 25°C ID 93 A TC = 100°C 65 Power Dissipation RqJC (Note 1) TC = 25°C PD 79 W TC = 100°C 40 Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TA = 25°C ID 20 A TA = 100°C 14 Power Dissipation RqJA (Notes 1 & 2) TA = 25°C PD 3.7 W TA = 100°C 1.8 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 750 A Operating Junction and Storage Temperature TJ, Tstg − 55 to +175 °C Source Current (Body Diode) IS 100 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A) EAS 185 mJ Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 1.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 41 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. MARKING DIAGRAM www.onsemi.com XXXXXX = 5C646L XXXXXX = (NVMFS5C646NL) or XXXXXX = 646LWF XXXXXX = (NVMFS5C646NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability XXXXXX AYWZZ V(BR)DSS RDS(ON) MAX ID MAX 60 V 4.7 m W @ 10 V 93 A 6.3 m W @ 4.5 V G (4) S (1,2,3) N−CHANNEL MOSFET D (5,6) S S S G D D D D DFN5 (SO−8FL) CASE 488AA STYLE 1 1 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION |
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