NVC6S5A354PLZT1G datasheet(4/6 Pages) ONSEMI

Part #	NVC6S5A354PLZT1G

Description	P-Channel Power MOSFET

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NVC6S5A354PLZ

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4

VGS -- Qg

Total Gate Charge, Qg -- nC

HD1150610

S O A

Drain to Source Voltage, VDS -- V

2

3

5

7

2

--0.1

3

5

7

2

--1.0

--0.01

23

5 7

23

5 7

23

5 7

--0.01

--0.1

--1.0

23

5 7

--10

--100

10ms

100ms

Operation in this area

is limited by RDS(on).

ID= --3A

DC

operation

(T

a=25

C

)

IDP= --16A (PW10s)

1ms

3

5

7

2

--10

3

5

7

--100

100



s

Ta=25

C

Single pulse

Surface mounted on FR4 board using a 92mm2, 1 oz. Cu pad.

016

4

26

8

14

12

10

IT16622

0

--1

--2

--3

--4

--5

--6

--7

--8

--9

--10

VDS= --30V

ID= --4A

HD150610

Ambient Temperature, Ta --

C

PD -- Ta

0

25

50

75

100

150

125

2.0

1.8

0.8

0.4

1.4

0.2

1.2

0.6

1.6

175

Surface mounted on ceramic substrate(1500mm2

0.8mm).

1.0

200

Surface mounted on FR4 board

using a 92mm2, 1 oz. Cu pad.

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NVC6S5A354PLZT1G Datasheet(PDF) 4 Page - ON Semiconductor

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