NTMFS4982NFT3G datasheet(1/7 Pages) ONSEMI

Part #	NTMFS4982NFT3G

Description	Single N?묬hannel Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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February, 2014 − Rev. 3

1

Publication Order Number:

NTMFS4982NF/D

NTMFS4982NF

Power MOSFET

30 V, 207 A, Single N−Channel, SO−8 FL

Features

• Integrated Schottky Diode

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Server, Netcom, POL

• Synchronous Rectification for DC−DC Converters

• Low Side Switching

• High Performance Applications

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

36

A

TA = 85°C

26

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.7

W

Continuous Drain

Current RqJA v

10 sec

TA = 25°C

ID

60

A

TA = 85°C

43

Power Dissipation

RqJA, t v 10 sec

TA = 25°C

PD

7.4

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

26.5

A

TA = 85°C

19

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

1.5

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

207

A

TC = 85°C

149

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

89.3

W

Pulsed Drain Current

tp=10ms

TA = 25°C

IDM

350

A

Current limited by package

TA = 25°C

IDmaxpkg

100

A

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

54

A

Drain to Source dV/dt

dV/dt

6

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 50 V, VGS = 10 V, IL = 50 Apk,

L = 0.1 mH, RG = 25 W)

EAS

125

mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

4982NF

AYWZZ

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

1.3 mW @ 10 V

207 A

1.9 mW @ 4.5 V

N−CHANNEL MOSFET

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4982NFT1G

SO−8FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4982NFT3G

SO−8FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

*For additional information on our Pb−Free strategy

and soldering details, please download the ON

Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

G

S

D

(5, 6)

(4)

(1, 2, 3)

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