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MTD20N03HDLG Datasheet(PDF) 2 Page - ON Semiconductor |
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MTD20N03HDLG Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 9 page  MTD20N03HDL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Note 5) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 30 − − 43 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 10 100 mAdc Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Cpk ≥ 2.0) (Note 5) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 5.0 2.0 − Vdc mV/ °C Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Note 5) (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 10 Adc) RDS(on) − 0.034 0.030 0.040 0.035 W Drain−to−Source On−Voltage (VGS = 5.0 Vdc) (ID = 20 Adc) (ID = 10 Adc, TJ = 125°C) VDS(on) − − 0.55 − 0.8 0.7 Vdc Forward Transconductance (VDS = 5.0 Vdc, ID = 10 Adc) gFS 10 13 − mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 880 1260 pF Output Capacitance Coss − 300 420 Transfer Capacitance Crss − 80 150 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time (VDD = 15 Vdc, ID = 20 Adc, VGS = 5.0 Vdc, RG = 9.1 W) td(on) − 13 20 ns Rise Time tr − 212 238 Turn−Off Delay Time td(off) − 23 40 Fall Time tf − 84 140 Gate Charge (See Figure 8) (VDS = 24 Vdc, ID = 20 Adc, VGS = 5.0 Vdc) QT − 13.4 18.9 nC Q1 − 3.0 − Q2 − 7.3 − Q3 − 6.0 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Cpk ≥ 2.0) (Note 5) (IS = 20 Adc, VGS = 0 Vdc) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − 0.95 0.87 1.1 − Vdc Reverse Recovery Time (See Figure 15) (IS = 20 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) trr − 33 − ns ta − 23 − tb − 10 − Reverse Recovery Stored Charge QRR − 33 − mC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25 ″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25 ″ from package to source bond pad) LS − 7.5 − nH 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. 5. Reflects typical values. Cpk = Absolute Value of Spec (Spec−AVG/3.516 mA). |
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