MTD20N03HDLG datasheet(1/9 Pages) ONSEMI

Part #	MTD20N03HDLG

Description	N-Channel DPAK Power MOSFET

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June, 2006 − Rev. 6

1

Publication Order Number:

MTD20N03HDL/D

MTD20N03HDL

Preferred Device

Power MOSFET

20 Amps, 30 Volts, Logic Level

N−Channel DPAK

This advanced Power MOSFET is designed to withstand high

energy in the avalanche and commutation modes. This energy efficient

design also offers a drain−to−source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls, these devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

Features

• Avalanche Energy Specified

• Source−to−Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

• Pb−Free Packages are Available

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−Source Voltage

VDSS

30

Vdc

Drain−Gate Voltage (RGS = 1.0 MW)

VDGR

30

Vdc

Gate−Source Voltage

− Continuous

− Non−Repetitive (tp ≤ 10 ms)

VGS

VGSM

±15

± 20

Vdc

Vpk

Drain Current − Continuous

Drain Current − Continuous @ 100

°C

Drain Current − Single Pulse (tp ≤ 10 ms)

ID

IDM

20

16

60

Adc

Apk

Total Power Dissipation

Derate above 25

°C

Total Power Dissipation @ TC = 25°C (Note 2)

PD

74

0.6

1.75

W

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak

IL = 20 Apk, L = 1.0 mH, RG = 25 W)

EAS

200

mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

RqJC

RqJA

1.67

100

71.4

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR−4 board using the minimum recommended

pad size.

2. When surface mounted to an FR−4 board using the 0.5 sq.in. drain pad size.

N−Channel

D

S

G

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

1 Gate

2 Drain

4

Drain

DPAK

CASE 369C

STYLE 2

1 2

3

4

3 Source

4

Drain

DPAK

CASE 369D

STYLE 2

1

2

3

4

30 V

30 m

W@5.0 V

RDS(on) TYP

20 A

(Note 1)

ID MAX

V(BR)DSS

YWW

20N

03HLG

YWW

20N

03HL

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

2

Drain

1 Gate

3 Source

Y

= Year

WW

= Work Week

20N03HL = Device Code

G

= Pb−Free Package

MARKING DIAGRAM & PIN ASSIGNMENTS

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