MTP50N06V datasheet(6/7 Pages) ONSEMI

Part #	MTP50N06V

Description	N?묬hannel Power MOSFET

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MTP50N06V

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6

SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

10

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

VGS = 20 V

SINGLE PULSE

TC = 25°C

1.0

t, TIME (s)

Figure 13. Thermal Response

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

10

1000

1

100

1.0

0.1

0.01

0.2

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

dc

100 μs

1 ms

10 ms

10 μs

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.02

TJ, STARTING JUNCTION TEMPERATURE (°C)

25

50

75

100

125

150

0

400

240

160

320

80

ID = 42 A

175

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