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MTB30N06VLT4 Datasheet(PDF) 2 Page - ON Semiconductor |
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MTB30N06VLT4 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 10 page MTB30N06VL http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 μAdc) Temperature Coefficient (Positive) V(BR)DSS 60 − − 63 − − Vdc mV/°C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS − − − − 10 100 μAdc Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 − 1.5 4.0 2.0 − Vdc mV/°C Static Drain−to−Source On−Resistance (VGS = 5 Vdc, ID = 15 Adc) RDS(on) − 0.033 0.05 Ohms Drain−to−Source On−Voltage (VGS = 5 Vdc, ID = 30 Adc) (VGS = 5 Vdc, ID = 15 Adc, TJ = 150°C) VDS(on) − − 1.1 − 1.8 1.73 Vdc Forward Transconductance (VDS = 6.25 Vdc, ID = 15 Adc) gFS 13 21 − Mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss − 1130 1580 pF Output Capacitance Coss − 360 500 Transfer Capacitance Crss − 95 190 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time (VDD = 30 Vdc, ID = 30 Adc, VGS = 5 Vdc, RG = 9.1 Ω) td(on) − 14 30 ns Rise Time tr − 260 520 Turn−Off Delay Time td(off) − 54 110 Fall Time tf − 108 220 Gate Charge (See Figure 8) (VDS = 48 Vdc, ID = 30 Adc, VGS = 5 Vdc) QT − 27 40 nC Q1 − 5 − Q2 − 17 − Q3 − 15 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 30 Adc, VGS = 0 Vdc) (IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C) VSD − − 0.98 0.89 1.6 − Vdc Reverse Recovery Time (IS = 30 Adc, VGS = 0 Vdc, dIS/dt = 100 A/μs) trr − 86 − ns ta − 49 − tb − 37 − Reverse Recovery Stored Charge QRR − 0.228 − μC INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the drain lead 0.25″ from package to center of die) LD − 4.5 − nH Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) LS − 7.5 − nH 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. |
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