MTB30N06VLT4 datasheet(2/10 Pages) ONSEMI

Part #	MTB30N06VLT4

Description	N?묬hannel Power MOSFET

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

Logo

2 / 10 page

MTB30N06VL

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 μAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

−

63

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

10

100

μAdc

Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.5

4.0

2.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (VGS = 5 Vdc, ID = 15 Adc)

RDS(on)

−

0.033

0.05

Ohms

Drain−to−Source On−Voltage

(VGS = 5 Vdc, ID = 30 Adc)

(VGS = 5 Vdc, ID = 15 Adc, TJ = 150°C)

VDS(on)

−

1.1

−

1.8

1.73

Vdc

Forward Transconductance (VDS = 6.25 Vdc, ID = 15 Adc)

gFS

13

21

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

1130

1580

pF

Output Capacitance

Coss

−

360

500

Transfer Capacitance

Crss

−

95

190

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 30 Adc,

VGS = 5 Vdc,

RG = 9.1 Ω)

td(on)

−

14

30

ns

Rise Time

tr

−

260

520

Turn−Off Delay Time

td(off)

−

54

110

Fall Time

tf

−

108

220

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 30 Adc,

VGS = 5 Vdc)

QT

−

27

40

nC

Q1

−

5

−

Q2

−

17

−

Q3

−

15

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 30 Adc, VGS = 0 Vdc)

(IS = 30 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

0.98

0.89

1.6

−

Vdc

Reverse Recovery Time

(IS = 30 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

trr

−

86

−

ns

ta

−

49

−

tb

−

37

−

Reverse Recovery Stored

Charge

QRR

−

0.228

−

μC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

−

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

LS

−

7.5

−

nH

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

Similar Part No. - MTB30N06VLT4

Manufacturer	Part #	Datasheet	Description
Motorola, Inc	MTB30N06VL	262Kb / 10P	TMOS POWER FET 30 AMPERES 60 VOLTS
Inchange Semiconductor ...	MTB30N06VL	333Kb / 2P	isc N-Channel MOSFET Transistor

More results

Similar Description - MTB30N06VLT4

Manufacturer	Part #	Datasheet	Description
ON Semiconductor	MGSF3442VT1	175Kb / 8P	N?묬hannel Power MOSFET Sep, 2004 ??Rev. XXX
	MTW24N40E	173Kb / 8P	N?묬hannel Power MOSFET Sep, 2000 ??Rev. XXX
	MMDF5N02Z	127Kb / 12P	N?묬hannel Power MOSFET August, 2004 ??Rev. XXX
	MTW16N40E	123Kb / 8P	N?묬hannel Power MOSFET August, 2004 ??Rev. XXX
	MTSF3N02HD	304Kb / 12P	N?묬hannel Power MOSFET August, 2006 ??Rev. 6
	NTP15N40	148Kb / 4P	N?묬hannel Power MOSFET August, 2006 ??Rev. 2
	MTB36N06V	263Kb / 10P	N?묬hannel Power MOSFET August, 2006 ??Rev. 4
	NTP22N06L	200Kb / 7P	N?묬hannel Power MOSFET August, 2006 ??Rev. 2
Dongguan Pingjingsemi T...	PJM1514NDJ	892Kb / 5P	N?묬hannel Power MOSFET
Dongguan Pingjingsemi T...	PJM1516NDJ	984Kb / 5P	N?묬hannel Power MOSFET
ON Semiconductor	MMDF7N02Z	256Kb / 12P	N?묬hannel Power MOSFET Sep, 2004 ??Rev. XXX

More results

MTB30N06VLT4 Datasheet(PDF) 2 Page - ON Semiconductor

MTB30N06VLT4 Datasheet(HTML) 2 Page - ON Semiconductor

Similar Part No. - MTB30N06VLT4

Similar Description - MTB30N06VLT4

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL