© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 3

1

Publication Order Number:

MMDFS6N303/D

MMDFS6N303

Power MOSFET

6 Amps, 30 Volts

N−Channel SO−8, FETKYt

level MOSFETs packaged with industry leading, low forward drop,

low leakage Schottky Barrier rectifiers to offer high efficiency

components in a space saving configuration. Independent pinouts for

MOSFET and Schottky die allow the flexibility to use a single

component for switching and rectification functions in a wide variety

of applications such as Buck Converter, Buck−Boost, Synchronous

Rectification, Low Voltage Motor Control, and Load Management in

Battery Packs, Chargers, Cell Phones and other Portable Products.

Features

Board Space Savings

MOSFET MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

30

Vdc

30

Vdc

Gate−to−Source Voltage — Continuous

"20

Vdc

Drain Current (Note 2)

− Single Pulse (tp v 10 ms)

6.0

30

Adc

Apk

(Note 2)

2.0

Watts

Single Pulse Drain−to−Source Avalanche

325

mJ

1. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.

2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided),

10 sec. max.

Anode

1

2

3

4

8

7

6

5

Top View

Anode

Source

Gate

Cathode

Cathode

Drain

Drain

D

S

G

N−Channel

MARKING

DIAGRAM

PIN ASSIGNMENT

6 AMPERES

30 VOLTS

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

Package

ORDERING INFORMATION

MMDFS6N303R2

SO−8

2500/Tape & Reel

SO−8

CASE 751

STYLE 18

1

8

6N303

ALYW

1

8

A

= Assembly Location

L

= Wafer Lot

Y

= Year

W

= Work Week