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NVMFS5C468NL Datasheet(PDF) 1 Page - ON Semiconductor

Part # NVMFS5C468NL
Description  Single N?묬hannel Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVMFS5C468NL Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 1
1
Publication Order Number:
NVMFS5C468NL/D
NVMFS5C468NL
Power MOSFET
40 V, 10.3 m
W, 37 A, Single N−Channel
Features
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C468NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain
Current RqJC
(Notes 1, 3)
Steady
State
TC = 25°C
ID
37
A
TC = 100°C
26
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
28
W
TC = 100°C
14
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TA = 25°C
ID
13
A
TA = 100°C
9.2
Power Dissipation
RqJA (Notes 1 & 2)
TA = 25°C
PD
3.5
W
TA = 100°C
1.7
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
190
A
Operating Junction and Storage Temperature
TJ, Tstg
− 55 to
+ 175
°C
Source Current (Body Diode)
IS
31
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 2 A)
EAS
95
mJ
Lead Temperature for Soldering Purposes
(1/8
″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
5.3
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
43
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
www.onsemi.com
XXXXXX
AYWZZ
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
XXXXXX = 5C468L
XXXXXX = (NVMFS5C468NL) or
XXXXXX = 468LWF
XXXXXX = (NVMFS5C468NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
V(BR)DSS
RDS(ON) MAX
ID MAX
40 V
10.3 m
W @ 10 V
37 A
17.6 m
W @ 4.5 V


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