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NVMFS5C450NT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NVMFS5C450NT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NVMFS5C450N www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ 20 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V TJ = 25°C 10 mA TJ = 125°C 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 65 mA 2.5 3.5 V Threshold Temperature Coefficient VGS(TH)/TJ −9.1 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 2.7 3.3 m W Forward Transconductance gFS VDS =15 V, ID = 50 A 93 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 25 V 1600 pF Output Capacitance COSS 830 Reverse Transfer Capacitance CRSS 28 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 50 A 23 nC Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 20 V; ID = 50 A 5.1 Gate−to−Source Charge QGS 9.0 Gate−to−Drain Charge QGD 3.5 Plateau Voltage VGP 5.3 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W 10 ns Rise Time tr 47 Turn−Off Delay Time td(OFF) 19 Fall Time tf 3.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 50 A TJ = 25°C 0.9 1.2 V TJ = 125°C 0.78 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A 37 ns Charge Time ta 18 Discharge Time tb 19 Reverse Recovery Charge QRR 23 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. |
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