Electronic Components Datasheet Search |
|
NVMFS4C05N Datasheet(PDF) 1 Page - ON Semiconductor |
|
NVMFS4C05N Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 1 1 Publication Order Number: NVMFS4C05N/D NVMFS4C05N Power MOSFET 30 V, 116 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJA (Notes 1, 2 and 4) Steady State TA = 25°C ID 24.7 A TA = 80°C 19.6 Power Dissipation RqJA (Notes 1, 2 and 4) TA = 25°C PD 3.61 W Continuous Drain Current RqJC (Notes 1, 2, 3 and 4) TC = 25°C ID 116 A Continuous Drain Current RqJC (Notes 1, 2, 3 and 4) TC = 80°C 92 Power Dissipation RqJC (Notes 1, 2, 3 and 4) TC = 25°C PD 79 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 174 A Operating Junction and Storage Temperature TJ, TSTG −55 to +175 °C Source Current (Body Diode) IS 72 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL = 29 Apk, L = 0.1 mH) EAS 42 mJ Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad. 3. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. 4. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. SO−8 FLAT LEAD CASE 488AA STYLE 1 MARKING DIAGRAM http://onsemi.com 4C05N = Specific Device Code for NVMFS4C05N 4C05WF= Specific Device Code of NVMFS4C05NWF A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceabililty 4C05xx AYWZZ 1 V(BR)DSS RDS(ON) MAX ID MAX 30 V 3.4 m W @ 10 V 116 A 5.0 m W @ 4.5 V N−CHANNEL MOSFET Device Package Shipping† ORDERING INFORMATION NVMFS4C05NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NVMFS4C05NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. S S S G D D D D G (4) S (1,2,3) D (5−8) NVMFS4C05NWFT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NVMFS4C05NWFT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel |
Similar Part No. - NVMFS4C05N |
|
Similar Description - NVMFS4C05N |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |