NVMFS4C05N datasheet(1/6 Pages) ONSEMI

Part #	NVMFS4C05N

Description	Single N?묬hannel Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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September, 2014 − Rev. 1

1

Publication Order Number:

NVMFS4C05N/D

NVMFS4C05N

Power MOSFET

30 V, 116 A, Single N−Channel, SO−8 FL

Features

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical

Inspection

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Notes 1, 2 and 4)

Steady

State

TA = 25°C

ID

24.7

A

TA = 80°C

19.6

Power Dissipation

RqJA (Notes 1, 2

and 4)

TA = 25°C

PD

3.61

W

Continuous Drain

Current RqJC

(Notes 1, 2, 3

and 4)

TC = 25°C

ID

116

A

Continuous Drain

Current RqJC

(Notes 1, 2, 3

and 4)

TC = 80°C

92

Power Dissipation

RqJC (Notes 1, 2, 3

and 4)

TC = 25°C

PD

79

W

Pulsed Drain

Current

TA = 25°C, tp = 10 ms

IDM

174

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+175

°C

Source Current (Body Diode)

IS

72

A

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, IL = 29 Apk, L = 0.1 mH)

EAS

42

mJ

Lead Temperature for Soldering Purposes

(1/8

″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad.

3. Assumes heat−sink sufficiently large to maintain constant case temperature

independent of device power.

4. Continuous DC current rating. Maximum current for pulses as long as one

second is higher but dependent on pulse duration and duty cycle.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

4C05N = Specific Device Code for

NVMFS4C05N

4C05WF= Specific Device Code of

NVMFS4C05NWF

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceabililty

4C05xx

AYWZZ

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

3.4 m

W @ 10 V

116 A

5.0 m

W @ 4.5 V

N−CHANNEL MOSFET

Device

Package

Shipping†

ORDERING INFORMATION

NVMFS4C05NT1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NVMFS4C05NT3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

G (4)

S (1,2,3)

D (5−8)

NVMFS4C05NWFT1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NVMFS4C05NWFT3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

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