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NVMFD5875NLT1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NVMFD5875NLT1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 6 page NVMFD5875NL www.onsemi.com 4 TYPICAL CHARACTERISTICS 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 Figure 7. Capacitance Variation DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C VGS = 0 V Ciss Coss Crss Figure 8. Gate−to−Source vs. Gate Charge Qg, TOTAL GATE CHARGE (nC) 1 10 100 1000 1 10 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance RG, GATE RESISTANCE (W) VDD = 48 V ID = 5 A VGS = 10 V td(off) td(on) tf tr 0 10 20 30 40 0.5 0.6 0.7 0.8 0.9 1.0 Figure 10. Diode Forward Voltage VSD, SOURCE−TO−DRAIN VOLTAGE (V) TJ = 25°C VGS = 0 V Figure 11. Maximum Rated Forward Biased Safe Operating Area VDS, DRAIN VOLTAGE (V) 0.1 0.2 0.3 0.4 0 1 2 3 4 5 6 7 8 9 10 01 234 56 789 10 11 TJ = 25°C VDD = 48 V ID = 5 A QT Qgs Qgd 100 ms 10 ms 1 ms dc 10 ms VGS = 20 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 100 10 1 0.1 0.1 1 10 100 |
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