NVMFD5875NLT1G datasheet(4/6 Pages) ONSEMI

Part #	NVMFD5875NLT1G

Description	Dual N?묬hannel Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NVMFD5875NL

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TYPICAL CHARACTERISTICS

0

100

200

300

400

500

600

700

800

0

5

10

15

20

25

30

Figure 7. Capacitance Variation

DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

Figure 8. Gate−to−Source vs. Gate Charge

Qg, TOTAL GATE CHARGE (nC)

1

10

100

1000

1

10

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

VDD = 48 V

ID = 5 A

VGS = 10 V

td(off)

td(on)

tf

tr

0

10

20

30

40

0.5

0.6

0.7

0.8

0.9

1.0

Figure 10. Diode Forward Voltage

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

TJ = 25°C

VGS = 0 V

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN VOLTAGE (V)

0.1

0.2

0.3

0.4

0

1

2

3

4

5

6

7

8

9

10

01

234

56

789

10

11

TJ = 25°C

VDD = 48 V

ID = 5 A

QT

Qgs

Qgd

100

ms

10

ms

1 ms

dc

10 ms

VGS = 20 V

Single Pulse

TC = 25°C

RDS(on) Limit

Thermal Limit

Package Limit

100

10

1

0.1

1

10

100

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NVMFD5875NLT1G Datasheet(PDF) 4 Page - ON Semiconductor

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