NTB15N40 datasheet(2/4 Pages) ONSEMI

Part #	NTB15N40

Description	N?묬hannel Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTP15N40, NTB15N40

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

400

−

510

−

Vdc

mV/°C

Zero Gate Voltage Collector Current

(VDS = 400 Vdc, VGS = 0 Vdc)

(VDS = 400 Vdc, VGS = 0 Vdc, TJ =125°C)

IDSS

−

10

100

μAdc

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0)

IGSS(f)

IGSS(r)

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

ID = 0.25 mA, VDS = VGS

Temperature Coefficient (Negative)

VGS(th)

2.0

−

2.5

6.8

4.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 7.5 Adc)

RDS(on)

−

230

260

mOhm

Drain−to−Source On−Voltage

(VGS = 10 Vdc, ID = 15 Adc)

(VGS = 10 Vdc, ID = 7.5 Adc, TJ = 125°C)

VDS(on)

−

4.7

4.1

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 7.5 Adc)

gFS

10

13

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

1800

2520

pF

Output Capacitance

Coss

−

630

880

Transfer Capacitance

Crss

−

40

80

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 200 Vdc, ID = 15 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

−

13

30

ns

Rise Time

tr

−

40

80

Turn−Off Delay Time

td(off)

−

49

100

Fall Time

tf

−

46

90

Gate Charge

(VDS = 320 Vdc, ID = 15 Adc,

VGS = 10 Vdc)

QT

−

37

50

nC

Q1

−

8.0

−

Q2

−

12

−

Q3

−

20

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1)

(IS = 15 Adc, VGS = 0 Vdc)

(IS = 15 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.90

0.80

1.0

−

Vdc

Reverse Recovery Time

(IS = 15 Adc, VGS = 0 Vdc,

diS/dt = 100 A/μs)

trr

−

290

−

ns

ta

−

170

−

tb

−

120

−

Reverse Recovery Stored

Charge

QRR

−

3.5

−

μC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

LD

−

3.5

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

LS

−

7.5

−

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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