NTMS4P01R2

http://onsemi.com

2

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

−12

V

−12

V

Gate−to−Source Voltage − Continuous

±10

V

Thermal Resistance −

Junction−to−Ambient (Note 1)

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

50

2.5

−6.04

−4.82

1.2

−4.18

−20

°C/W

W

A

A

W

A

A

Thermal Resistance −

Junction−to−Ambient (Note 2)

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

85

1.47

−4.50

−3.65

0.7

−3.20

−15

°C/W

W

A

A

W

A

A

Thermal Resistance −

Junction−to−Ambient (Note 3)

Continuous Drain Current @ 25°C

Continuous Drain Current @ 70°C

Maximum Operating Power Dissipation

Maximum Operating Drain Current

Pulsed Drain Current (Note 4)

159

0.79

−3.40

−2.72

0.38

−2.32

−12

°C/W

W

A

A

W

A

A

Operating and Storage Temperature Range

−55 to +150

°C

320

mJ

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds.

2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state.

3. Minimum FR−4 or G−10 PCB, t = Steady State.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.