NTMFS4H01N datasheet(4/7 Pages) ONSEMI

Part #	NTMFS4H01N

Description	Power MOSFET Single N?묬hannel

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NTMFS4H01N

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Qg, TOTAL GATE CHARGE (nC)

25

20

15

10

5

0

1000

3000

4000

6000

7000

9000

10,000

90

60

50

40

30

20

10

0

2

4

6

8

10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

1000

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0

5

10

15

20

25

30

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TJ, STARTING JUNCTION TEMPERATURE (°C)

100

10

1

0.1

0.01

0.1

1

10

100

1000

150

125

100

75

50

25

0

20

60

80

120

160

180

220

2000

5000

8000

70

80

TJ = 25°C

VGS = 0 V

Ciss

Coss

Crss

TJ = 25°C

VGS = 10 V

VDD = 12.0 V

ID = 30 A

QT

Qgd

Qgs

td(off)

td(on)

tr

tf

TJ = 125°C

TJ = 25°C

VGS = 0 V

0 V < VGS < 10 V

100

ms

1 ms

10 ms

dc

RDS(on) Limit

Thermal Limit

Package Limit

ID = 38 A

40

100

140

200

VDD = 12 V

ID = 15 A

VGS = 10 V

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