NOIP1SE025KA-GDI datasheet(4/87 Pages) ONSEMI

Part #	NOIP1SE025KA-GDI

Description	Global Shutter CMOS Image Sensors

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Manufacturer	ONSEMI [ON Semiconductor]

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NOIP1SN025KA, NOIP1SN016KA, NOIP1SN012KA, NOIP1SN010KA

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Table 3. RECOMMENDED OPERATING RATINGS (Note 3)

Symbol

Description

Min

Max

Units

TJ

Operating temperature range

−40

+85

°C

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond

the Recommended Operating Ranges limits may affect device reliability.

Table 4. ABSOLUTE MAXIMUM RATINGS (Note 4)

Symbol

Parameter

Min

Max

Units

ABS (1.0 V supply)

ABS rating for 1.0 V supply

–0.5

1.2

V

ABS (1.8 V supply group)

ABS rating for 1.8 V supply group

–0.5

2.2

V

ABS (3.3 V supply group)

ABS rating for 3.3 V supply group

–0.5

4.3

V

ABS (4.2 V supply)

ABS rating for 4.2 V supply

–0.5

4.6

V

ABS (4.5 V supply)

ABS rating for 4.5 V supply

–0.5

5.0

V

TS (Notes 4 and 5)

ABS storage temperature range

0

150

°C

ABS storage humidity range at 85

°C

85

%RH

Electrostatic discharge (ESD)

(Notes 3 and 4)

Human Body Model (HBM): JS−001−2010

2000

V

Charged Device Model (CDM): JESD22−C101

500

LU

Latch-up: JESD−78

140

mA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

3. Operating ratings are conditions in which operation of the device is intended to be functional.

4. ON Semiconductor recommends that customers become familiar with, and follow the procedures in JEDEC Standard JESD625−A. Refer

to Application Note AN52561. Long term exposure toward the maximum storage temperature will accelerate color filter degradation.

5. Caution needs to be taken to avoid dried stains on the underside of the glass due to condensation. The glass lid glue is permeable and can

absorb moisture if the sensor is placed in a high % RH environment.

Table 5. ELECTRICAL SPECIFICATIONS

Boldface Limits apply for TJ = TMIN to TMAX, all other limits TJ = +30°C (Notes 6, 7, 8 and 9)

Parameter

Description

Min

Typ

Max

Units

Power Supply Parameters

vdda_33

Analog supply - 3.3 V domain. gnda_33 is connected to substrate

3.2

3.3

3.4

V

Idda_33

Current consumption from analog supply

910

mA

vddd_33

Digital supply - 3.3 V domain. gndd_33 is connected to substrate

3.2

3.3

3.4

V

Iddd_33

Current consumption from 3.3 V digital supply

90

mA

vdd_18

Digital supply - 1.8 V domain. gndd_18 is connected to substrate

1.7

1.8

1.9

V

Idd_18

Current consumption 1.8 V digital supply

540

mA

vdd_pix

Pixel array supply

3.25

3.3

3.35

V

Idd_pix

Current consumption from pixel supply

115

mA

vdd_resfd

Floating diffusion reset supply

4.2

V

gnd_resfd

Floating diffusion reset ground. Not connected to substrate

Note This is a sinking power supply with 200 mA range.

0

V

vdd_trans

Pixel transfer supply

3.3

V

gnd_trans

Pixel transfer ground. Not connected to substrate.

Note This is a sinking power supply with 200 mA range.

0

V

6. All parameters are characterized for DC conditions after thermal equilibrium is established.

7. This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is recommended

that normal precautions be taken to avoid application of any voltages higher than the maximum rated voltages to this high−impedance

circuit.

8. Minimum and maximum limits are guaranteed through test and design.

9. Vref_colmux supply should be able to source and sink current

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