MTD15N06V datasheet(2/8 Pages) ONSEMI

Part #	MTD15N06V

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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MTD15N06V

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 μAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

−

67

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

10

100

μAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

Temperature Coefficient (Negative)

VGS(th)

2.0

−

2.7

5.0

4.0

−

Vdc

mV/°C

Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 7.5 Adc)

RDS(on)

−

0.08

0.12

Ohm

Drain−Source On−Voltage (VGS = 10 Vdc)

(ID = 15 Adc)

(ID = 7.5 Adc, TJ = 150°C)

VDS(on)

−

2.0

−

2.2

1.9

Vdc

Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc)

gFS

4.0

6.2

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

469

660

pF

Output Capacitance

Coss

−

148

200

Reverse Transfer Capacitance

Crss

−

35

60

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 15 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

−

7.6

20

ns

Rise Time

tr

−

51

100

Turn−Off Delay Time

td(off)

−

18

40

Fall Time

tf

−

33

70

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 15 Adc,

VGS = 10 Vdc)

QT

−

14.4

20

nC

Q1

−

2.8

−

Q2

−

6.4

−

Q3

−

6.1

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1)

(IS = 15 Adc, VGS = 0 Vdc)

(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

1.05

1.5

1.6

−

Vdc

Reverse Recovery Time

(See Figure 14)

(IS = 15 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

trr

−

59.3

−

ns

ta

−

46

−

tb

−

13.3

−

Reverse Recovery Stored

Charge

QRR

−

0.165

−

μC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

LD

−

4.5

−

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

LS

−

7.5

−

nH

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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