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NCEP85T25T Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCEP85T25T Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  NCEP85T25T Pb Free Product http://www.ncepower.com Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =85V,ID =250A RDS(ON) <2.8mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification Schematic diagram TO-247 top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP85T25T NCEP85T25T TO-247 - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 85 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 250 A Drain Current-Continuous(TC=100℃) ID (100℃) 180 A Pulsed Drain Current IDM 800 A Maximum Power Dissipation PD 300 W Derating factor 2 W/℃ Single pulse avalanche energy (Note 5) EAS 1700 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 0.5 /W ℃ |
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