BD777 datasheet(2/4 Pages) ONSEMI

Part #	BD777

Description	Plastic Darlington Complementary Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BD777

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Figure 1. Power Derating

T, TEMPERATURE (°C)

80

4.0

8.0

1.6

1.2

0

0.4

0.8

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (1)

BD776

(IO = 10 mAdc, IB = 0)

BD777, BD778

BD780

VCEO(sus)

45

60

80

—

Vdc

Collector Cutoff Current

(VCE = 20 Vdc, IB = 0)

BD776

(VCE = 30 Vdc, IB = 0)

BD777, BD778

(VCE = 40 Vdc, IB = 0)

BD780

ICEO

—

100

μAdc

Collector Cutoff Current

(VCB = Rated, VCEO(sus), IE = 0)

(VCB = Rated, VCEO(sus), IE = 0, IC = 100°C)

ICBO

—

1.0

100

μAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

1.0

μAdc

ON CHARACTERISTICS

DC Current Gain (IC = 2.0 Adc, VCE = 3.0 Vdc)

HFE

750

—

Collector−Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc)

VCE(Sat)

—

1.5

Vdc

Base Emitter Saturation Voltage (IC = 1.5 Adc, IB = 6 mAdc)

VBE(Sat)

—

2.5

Vdc

Base−Emitter On Voltage (IC = 1.5 Adc,VCE = 3 Vdc)

VBE(On)

—

2.3

Vdc

Output Diode Voltage Drop (IEC = 2.0 Adc)

VEC

—

2.0

Vdc

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth Product (IC = 1.0 Adc, VCE = 2.0 Vdc)

fT

20

—

MHz

Symbol

Min

Typ

Unit

Turn−On Time (IC = 250 mA/VCE = 2 V)

BD775−777

BD776−778−780

ton

—

250

150

ns

Turn−Off Time (IC = 250 mA, VCE = 2 V)

BD775−777

BD776−778−780

toff

—

600

400

ns

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