NCE3415 datasheet(2/7 Pages) NCEPOWER

Part #	NCE3415

Description	NCE P-Channel Enhancement Mode Power MOSFET

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Manufacturer	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

Direct Link	http://www.ncepower.com

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Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

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NCE3415

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Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±10V,VDS=0V

-

±10

μA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.35

-0.55

-0.9

V

VGS=-4.5V, ID=-4A

-

34

45

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-2.5V, ID=-4A

-

44

60

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=-4A

8

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

-

950

-

PF

Output Capacitance

Coss

-

165

-

PF

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

-

120

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

-

12

nS

Turn-on Rise Time

tr

-

10

nS

Turn-Off Delay Time

td(off)

-

19

nS

Turn-Off Fall Time

tf

VDD=-10V,RL=2. 5Ω

VGS=-4.5V,RGEN=3Ω

-

25

nS

Total Gate Charge

Qg

-

12

nC

Gate-Source Charge

Qgs

-

1.4

-

nC

Gate-Drain Charge

Qgd

VDS=-10V,ID=-4A,

VGS=-4.5V

-

3.6

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-4A

-

-1.2

V

Diode Forward Current (Note 2)

IS

-

-4

A

Notes:

1.

Repetitive Rating: Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t ≤ 10 sec.

3.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .

%

4.

Guaranteed by design, not subject to production

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NCE3415 Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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