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NTMFS4925NET1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NTMFS4925NET1G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 7 page NTMFS4925NE http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Unit Max Typ Min Test Condition Symbol SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time td(ON) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 7.4 ns Rise Time tr 27.5 Turn−Off Delay Time td(OFF) 20.3 Fall Time tf 4.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.86 1.1 V TJ = 125°C 0.75 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 25.8 ns Charge Time ta 12.4 Discharge Time tb 13.4 Reverse Recovery Charge QRR 13.6 nC PACKAGE PARASITIC VALUES Source Inductance LS TA = 25°C 1.00 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG 0.8 2.2 W 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. |
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Similar Description - NTMFS4925NET1G |
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