NCE20ED135T datasheet(2/7 Pages) NCEPOWER

Part #	NCE20ED135T

Description	1350V, 20A, Trench FS IGBT

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Manufacturer	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

Direct Link	http://www.ncepower.com

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Wuxi NCE Power Semiconductor Co., Ltd

Page 2

v1.0

NCE20ED135T

Pb Free Product

Thermal Characteristics

Symbol Parameter

Typ.

Max.

Units

R JC

Thermal Resistance, Junction to Case

-

0.37

°C/W

RJA

Thermal Resistance, Junction to Ambient

-

40

°C/W

Electrical Characteristics T

C=25°C

Symbol

Parameter

Test Conditions

Min.

Typ. Max.

Units

Off Characteristics

BVCES

Collector to Emitter

Breakdown Voltage

VGE=0V, Ic=1mA

1350

-

V

ICES

Collector Cut-Off Current

VCE=1350V, VGE=0V

-

100

uA

IGES

G-E Leakage Current

VGE=30V, VCE=0V

-

+/-100

nA

On Characteristics

VGE(th)

G-E Threshold Voltage

IC=1mA, VCE=VGE

5

7

V

IC=20A, VGE=15V

TC=25°C

-

1.7

2

V

VCE(sat)

Collector to Emitter Saturation

Voltage

IC=20A, VGE=15V

TC=125°C

-

2

-

V

Dynamic Characteristics

Cies

Input Capacitance

-

2050

-

pF

Coes

Output Capacitance

-

70

-

pF

Cres

Reverse Transfer

Capacitance

VCE=30V, VGE=0V,

f=1MHz

-

40

-

pF

Switching Characteristics

td(off)

Turn-Off Delay Time

-

190

-

ns

tf

Fall Time

-

100

ns

Eoff

Turn-Off Switching Loss

VCC=600V,IC=20A,

RG=10Ώ,VGE=15V,

Inductive Load,

TC=25°C

-

0.9

mJ

td(off)

Turn-Off Delay Time

-

200

ns

tf

Fall Time

-

154

ns

Eoff

Turn-Off Switching Loss

VCC=600V,IC=20A,

RG=10Ώ,VGE=15V,

Inductive Load,

TC=125°C

-

1.4

mJ

Qg

Total Gate Charge

-

190

240

nC

Qge

Gate to Emitter Charge

-

15

23

nC

Qgc

Gate to Collector Charge

VCC=600V,IC=20A,

VGE=15V

-

80

120

nC

Diode Characteristics

VFM

Forward Voltage

IF=20A,TC=25°C

-

1.8

2

V

trr

Reverse Recovery Time

-

235

350

ns

Irr

Peak Reverse Recovery

Current

-

27

40

A

Qrr

Reverse Recovery Charge

IF=20A, dI/dt=200A/us

TC=25°C

-

3130 4700

uC

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