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NCE55P15 Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE55P15 Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
2 / 7 page Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCE55P15 Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance ,Junction-to-Case (Note 2) RθJC 3.3 /W ℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -55 - - V Zero Gate Voltage Drain Current IDSS VDS=-55V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.5 -2.6 -3.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-5A - 60 75 mΩ Forward Transconductance gFS VDS=-15V,ID=-5A 16 - - S Dynamic Characteristics (Note4) Input Capacitance Clss - 1450 - PF Output Capacitance Coss - 145 - PF Reverse Transfer Capacitance Crss VDS=-20V,VGS=0V, F=1.0MHz - 110 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 8 - nS Turn-on Rise Time tr - 9 - nS Turn-Off Delay Time td(off) - 65 - nS Turn-Off Fall Time tf VDD=-30V, ,RL=30Ω VGS=-10V,RGEN=6Ω - 30 - nS Total Gate Charge Qg - 26 - nC Gate-Source Charge Qgs - 4.5 - nC Gate-Drain Charge Qgd VDS=-30V,ID=-5A, VGS=-10V - 7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-5A - - 1.2 V Diode Forward Current (Note 2) IS - - -15 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production |
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