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LM5106 Datasheet(PDF) 4 Page - Texas Instruments

Part # LM5106
Description  100-V Half-Bridge Gate Driver With Programmable Dead-Time
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM5106 Datasheet(HTML) 4 Page - Texas Instruments

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LM5106
SNVS424D – JANUARY 2006 – REVISED DECEMBER 2014
www.ti.com
6 Specifications
6.1 Absolute Maximum Ratings
(1) (2)
MIN
MAX
UNIT
VDD to VSS
–0.3
18
V
HB to HS
–0.3
18
V
IN and EN to VSS
–0.3
VDD + 0.3
V
LO to VSS
–0.3
VDD + 0.3
V
HO to VSS
HS – 0.3
HB + 0.3
V
HS to VSS
(3)
100
V
HB to VSS
118
V
RDT to VSS
–0.3
5
V
Junction Temperature
150
°C
Storage temperature range, Tstg
–55
150
°C
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Recommended Operating Conditions are
conditions under which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured
performance limits and associated test conditions, see the Electrical Characteristics.
(2)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
(3)
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed –1 V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15 V. For example, if
VDD = 10 V, the negative transients at HS must not exceed –5 V.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1500
V
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
MIN
MAX
UNIT
VDD
8
14
V
HS(1)
–1
100
V
HB
HS + 8
HS + 14
V
HS Slew Rate
< 50
V/ns
Junction Temperature
–40
125
°C
(1)
In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally
not exceed –1 V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated
voltage transiently. If negative transients occur on HS, the HS voltage must never be more negative than VDD - 15 V. For example, if
VDD = 10 V, the negative transients at HS must not exceed –5 V.
4
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Product Folder Links: LM5106


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